KST10 HTSEMI | Alldatasheet
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VHF/UHF Transistor MARKING:3E1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 3 V IC Collector Current 40 mA PC Collector Power Dissipation 350 mW RΘJA Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 3 V Collector cut-off current ICBO VCB=25V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=2V, IC=0 0.1 µA DC current gain hFE VCE=10V, IC=4mA 60 Collector-emitter saturation voltage VCE(sat) IC=4mA, IB=0.4mA 0.5 V Base-emitter voltage VBE VCE=10V, IC=4mA 0.95 V Transition frequency fT VCE=10V,IC=4mA, f=100MHz 650 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 0.7 pF SOT–23 1. BASE 2. EMITTER 3. COLLECTOR KST10 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu