KSE340

KSE340 FOSHAN | Alldatasheet

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Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package. 高的击穿电压，适合用于变压器，与 KSE350 互补。 High collector-Emitter breakdown voltage，Suitable for transformer，complement to KSE350. 用于普通高压放大.。 High voltage general purpose applications. PIN1：Emitter PIN 2 ：Collector PIN 3 ：Base 放大及印章代码 / h FE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 3 2 1

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO 300 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage V EBO 5.0 V Collector Current – Continuous I C 500 mA Collector Power Dissipation PC(Tc=25℃) 20 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO I C=0.1mA I E=0 300 V Collector to Emitter Breakdown Voltage VCEO I C=1.0mA I B=0 300 V Emitter to Base Breakdown Voltage VEBO I E=0.1mA I C=0 5.0 V Collector Cut-Off Current I CBO VCB=300V I E=0 100 μA Emitter Cut-off Current I EBO V BE=3.0V I C=0 100 μA DC Current Gain h FE V CE=10V I C=50mA 30 240 Collector to Emitter Saturation Voltage VCE(sat) IC=50mA I B=5mA 1.0 V Base to Emitter Saturation Voltage V BE(sat) I C=50mA I B=5mA 1.2 V 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： KSE340： 为产品型号 Note: BR:   Company Code KSE340:  Product Type. **:  Lot No. Code, code change with Lot No. BR ** KSE340

Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 TO-126/F 500 6 3,000 5 15,000 135×190 237×172×102 560×245×195 套管包装 / T U B E Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 TO-126/F 65 26 1,690 5 8,450 532×31×5.6 555×164×50 575×290×180 使用说明 / N o t i c e s