KSD2058 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors KSD2058
DESCRIPTION
- With TO-220F package
- Complement to type KSB1366
APPLICATIONS
- With general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 0.5 A Ta=25 1.5 PC Collector dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors KSD2058 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA ;IB=0 60 V VCEsat Collector-emitter saturation voltage I C=2A ;IB=0.2A 1.5 V VBE Base-emitter on voltage I C=0.5A;VCE=5V 3.0 V ICBO Collector cut-off current V CB=60V; IE=0 10 µA IEBO Emitter cut-off current V EB=7V; IC=0 1 mA hFE DC current gain I C=0.5A ; VCE=5V 60 300 fT Transition frequency I C=0.5A ; VCE=5V 3.0 MHz COB Collector output capacitance f=1MHz;V CB=10V 35 pF Switching times ton Turn-on time 0.65 µs ts Storage time 1.3 µs tf Fall time IC=2.0A IB1=-IB2=0.2A VCC=30V ,RL=15@ 0.65 µs hFE Classifications O Y G 60-120 100-200 150-300
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors KSD2058 PACKAGE OUTLINE Fig.2 Outline dimensions