KSD1408 JIANGSU | Alldatasheet

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1.BASE 2.COLLECTOR 3.EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors KSD1408 TRANSISTOR (NPN)

FEATURES

MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 80 V Collector-emitter breakdown voltage V (BR)CEO I C =50mA,I B =0 80 V Emitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 5 V Collector cut-off current I CBO V CB =80V,I E =0 30 μA Emitter cut-off current I EBO V EB =5V,I C =0 100 μA h FE(1) V CE =5V, I C =0.5A 40 240 DC current gain h FE(2) V CE =5V, I C =3A 15 Collector-emitter saturation voltage V CE(sat) I C =3A,I B =0.3A 1.5 V Base-emitter voltage V BE V CE =5V, I C =3A 1.5 V Transition frequency f T V CE =5V,I C =0.5A 8 MHz Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 90 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF h FE(1) RANK R O Y RANGE 40-80 70-140 120-240 Symbol Paramete r Value Unit V CBO Collector-Base Voltage 80 V V CEO Collector-Emitter Voltage 80 V V EBO Emitter-Base Voltage 5 V I C Collector Current 4 A P C Collector Power Dissipation 2 W R θJA Thermal Resistance From Junction To Ambient 62.5 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 D,Jul,2017 1 32

www.cj-elec.com 2 D,Jul,2017 200 300 400 500 600 700 800 900 1000 1100 1200 1E-3 0.01 0.1 0 25 50 75 100 125 150 500 1000 1500 2000 2500 1E-3 0.01 0.1 1 200 300 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 100 150 200 250 300 350 400 450 500 1E-3 0.01 0.1 1 10 100 1000 012345 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 T a =100 T a =25 COLLCETOR CURRENT I C (A) BASE-EMITER VOLTAGE V BE (mV) I C V BE COMMON EMITTER V CE =5V COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (A) β=10 T a =100 T a =25 I C V BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (A) I C V CEsat T a =100 T a =25 β=10 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) COMMON EMITTER V CE =5V T a =25 T a =100 I C h FE 5.0mA 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA I B =0.5mA COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) COMMON EMITTER T a =25 Static Characteristic

www.cj-elec.com 3 D,Jul,2017 Min . Max. Min. Max. A 4.300 4.700 0.169 0.185 A2 2.800 3.200 0.110 0.126 A3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 D 9.960 10.360 0.392 0.408 E 14.800 15.200 0.583 0.598 e F Ф h 0.000 0.300 0.000 0.012 L 28.000 28.400 1.102 1.118 L1 1.700 1.900 0.067 0.075 L2 0.900 1.100 0.035 0.043 2.700 REF. 3.500 REF. 0.138 REF. 0.106 REF. 0.800 REF. 0.500 REF. 0.031 REF. 0.020 REF. Symbol Dimensions In Millimeters Dimensions In Inches 2.540 TYP. 0.100 TYP. 1.300 REF. 0.051 REF.