KSD1021 JIANGSU | Alldatasheet
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TO – 92S 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors KSD1021 TRANSISTOR (NPN)
FEATURES
MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = 0.1mA,I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA,I B =0 30 V Emitter-base breakdown voltage V (BR)EBO I E =0.1mA,I C =0 5 V Collector cut-off current I CBO V CB =30V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA DC current gain h FE V CE =1V, I C =100mA 70 400 Collector-emitter saturation voltage V CE(sat) I C =1A,I B =0.1A 0.5 V Base-emitter saturation voltage V BE (sat) I C =1A,I B =0.1A 1.2 V Collector output capacitance C ob V CB =6V,I E =0, f=1MHz 16 pF Transition frequency f T V CE =6V,I C =10mA
130 MHz
RANGE 70-140 120-240 200-400 Symbol Para meter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 30 V V EBO Emitter-Base Voltage 5 V I C Collector Current 1 A P C Collector Power Dissipation 350 mW R θJA Thermal Resistance From Junction To Ambient 357 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ JC(T www.cj-elec.com 1www.cj-elec.com 1 32 D,Aug,2016
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.420 1.620 0.056 0.064 A1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 D 3.900 4.100 0.154 0.161 D1 2.280 2.680 0.090 0.106 E 3.050 3.250 0.120 0.128 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 15.100 15.500 0.594 0.610 θ 45° TYP. 45° TYP. www.cj-elec.com 2 D,Aug,2016
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