KD421210A7 POWEREX | Alldatasheet

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Dual Darlington Transistor Module

100 Amperes/1200 Volts

L 8 u ‘Ss "“S SS" N ia ag r) al Lb) hell TT TRE NN fe @ & PUT TET TTT TPR Description: U - M6 THO (3 TYP.) J J Tis The Powerex Dual Darlington Transistor Modules are high power Pp fa Pp i i R her °F R devices designed for use aa ia i” 0 TAB in switching applications. The H fi pf tt modules are isolated, consisting ect Fo -— of two Darlington Transistors with G F Let WE LG each transistor having a reverse SSS parallel connected high-speed diode. B2x CONNECTION DIAGRAM Features: C Isolated Mounting ee O Planar Chips (Discrete Fast Recovery Feedback Diode ( High Gain (hee) E1ez E2 ct © Quick Connect Base-Emitter Signal Terminals © Base-Emitter Speed-up Diodes Applications: ax ot OAC Motor Control © DC Motor Control Outline Drawing (© Switching Power Supplies Dinewsons chet _Wilimets Dimension —akes Wines —«_Inverters A 4.252 Max. 108 Max. L 0.295 75 Ordering Information: B -3.66120.012 93203 M 0.236 6 Example: Select the complete ten © 2.441 Max. 62Max. —NOsSI a digit module part number you — Dy ju0020012 abana _ desire from the table - i.e. D 189020012 48203 P 0.669 17 KD421210A7 is a 1200 Volt E 1.487 37 Q 0.318 8 100 Ampere Dual Darlington F 1.181 Max. 30 Max. R 0.118 3 Module with a gain of 100 at rated G 0.630 16 Ss 0.276 7 current (100 Amperes). J 0.984 25 U M6 Metric M6 Type Volts (X 100) Amperes (X 10) K 0.591 15 kD42 12 10 D-57

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 KD421210A7 Dual Darlington Transistor Module Absolute Maximum Ratings, T, = 25 °C unless otherwise specified Ratings ‘Symbol KD421210A7 Units Junction Temperature Ty -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Sustaining Voltage, Vag = -2V Voevieus) 1200 Volts Collector-Base Voltage Veso 1200 Volts Emitter-Base Voltage Veo 7 Volts Collector-Emitter Voltage, Vag = -2V Voev 1200 Volts Continuous Collector Current le 100 ‘Amperes Diode Forward Current lem 100 ‘Amperes Continuous Base Current Ip 5 ‘Amperes Diode Surge Current les 1000 ‘Amperes Power Dissipation (Each Transistor) Pi 800 Watts Max. Mounting Torque M6 Terminal Screws - 26 in-lb. Max. Mounting Torque M6 Mounting Screws - 26 in-lb. Module Weight (Typical) - 470 Grams V Isolation Vas 2500 Volts Electrical Characteristics, T= 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current lcev Ve = 1200V, Vee = -2V - = 2 mA Emitter Cutoff Current leo Vep=7V - = 400 mA DC Current Gain hee Ig = 100A, Voz = 5V 75 - = - Diode Forward Voltage Ve lem = 100A - - 18 Volts Collector-Emitter Saturation Voltage Voeisat) Ig = 100A, Ip = 2A - - 3.0 Volts Base-Emitter Saturation Voltage Vecisat) Io = 100A, Ip = 2A = = 35 Volts. Resistive Turn-on ton Voc = 600V - - 3.0 us | Load Storage Time ts lo = 100A - - 15 ns Switch Times Fall Time t lat = “Ip = 2A - = 3.0 us Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Caseto-Sink Ras) ~~~ HalfModule SO SSSSC~S*~*~<~t | Thermal Resistance, Junction-to-Case___—-Aygy) —=~=S=CvansistorPart == SSC Thermal Resistance, Junction-to-Case Rai) Diode Part - = 0.65 | °CW D-58

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