KBU8005 FUJI | Alldatasheet
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Technical content
8 AMP SILICON BRIDGE RECTIFIER
Mi FEATURES 2 , : y e Rating to 1000V PRV il e Ideal for printed circuit board ¢ Surge overload rating to 300 Amperes peak HH Outline Drawing ¢ Reliable low cost construction utilizing molded plastic technique KBU e UL recognized: File #£106441 ¢ UL recognized 94V-O plastic material Foi sot — a Mf Mechanical Data | | bi ae © Case: Molded Plastic ae =p ¢ Mounting torque: 5 in. Ib. max. a ‘te | | i wae . tas | ¢ Mounting position: Any i] ote ua i + © Weight: 0.3 ounce, 8.0 grams elle _ tT Dimensions in inches and (millimeters) i Maximum Ratings & Characteristics © Ratings at 25° C ambient temperature unless otherwise specified © Single phase, half wave, 60Hz, resistive or inductive load © For capacitive load, derate current by 20% | _ - soos | 801 | soz | 804 | 806 | 808 | 810 | |_ Maximum Recurrent Peak Reverse Voltage 1000 | Vv | | Maximum RMS Voltage | Ves [35 [70 | 140 | 260 | 420 | 560 | 700 | Vv Maximum DC Blocking Voltage [ Voc [60 | 100 | 200 [400 | 600 | 600 | 1000 | V | Maximum Average Forward @ T= 100°C | | Hav) 8.0 A |_ Output Current __@ T= 65°C Peak Forward Surge Current | 8.3 ms Single Half-Sine-Wave 300 A Superimposed On Rated Load | Maximum DC Forward Voltage Drop per Element Ve 1 v | At4.0A DC ; __| Maximum DC Reverse Current At Rated@ Ta = 25°C ik 10 nA | DC Blocking Voltage per Element __@ Tc = 100°C 1 mA Maximum Thermal Resistance (Note) 5 | "CMV | Operating Temperature Range -55 to +125 °C Storage Temperature Range e810 0180 Note: Thermal resistance junction to case per diode Collmer Semiconductor, Inc.