KBU4005 FUJI | Alldatasheet
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Technical content
4 AMP SILICON BRIDGE RECTIFIER me
ae ; 2 St I FEATURES Z, ¢ Rating to 1000V PRV , Ideal for printed circuit board © Surge overload rating to 200 Amperes peak . . ‘ amperes p Hi Outline Drawing © Reliable low cost construction utilizing molded plastic technique © UL recognized: File #£106441 KBU ¢ UL recognized 94V-O plastic material wei soon
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M§ Mechanical Data | | = oa © Case: Molded Plastic 7 adel | i J © Mounting torque: 5 in. Ib. max. Ie, “9 ae | | | ll ass ¢ Mounting position: Any j 4 i 2 © Weight: 0.3 ounce, 8.0 grams le 22 T Dimensions in inches and (millimeters) i maximum Ratings & Characteristics © Ratings at 25° C ambient temperature unless otherwise specified © Single phase, half wave, 60Hz, resistive or inductive load © For capacitive load, derate current by 20% | : _ KBU401 | KBU402 KBU406|KBU408|KBU410| Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 _ 600 800 1000 Vv _ |_ Maximum RMS Voltage - | -Vems | 35 140 | 280 | 420 | 560 Vv Maximum DC Blocking Voltage _ Voc 60 100 - 200 | 400 600 800 1000 v Maximum Average Forward @Te= 100°C), 40 A Output Current - @ Ta= 65°C _ _ Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave lrsm 200 A Superimposed On Rated Load Maximum DC Forward Voltage Drop per Element Ve 1 Vv At 2.0A DC _ Maximum DC Reverse Current At Rated@ Ta= 25°C 10 uA DC Blocking Voltage per Element @ Tc = 100°C 4 _|oma Maximum Thermal Resistance (Note) Rrue 33 | SC Operating Temperature Range - __-55 to +125 - °C Storage Temperature Range __ __-55t0 +150 - _ Note: Thermal resistance junction to case per diode Collmer Semiconductor, Inc.