2SK904 FUJI | Alldatasheet
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2S K904. FUJI POWER MOS-FET ——— N-CHANNEL SILICON POWER MOS-FET F I Ss E R I ES lM -eatures HOutline Drawings igh speed switching @ Low on-resistance asi @No secondary breakdown oe a] “Le @ Low driving power 3 @High voltage r—* a a: me Applications || vote Switching regulators -_ t 3 Source LPs wel ew ont an @CC-DC converters ©@Ceneral purpose power amplifier TO-220AB EIAS SC-46 @iMax. Ratings and Characteristics WEquivalent Circuit Schematic @Absolute Maximum Ratings(Tc = 25°C) _ Kreme [Symbols | Ratings [Units ; i yrain-source voltage Voss V __ Continuous drain current In A | Drain (D) __ Pulsed drain current Thowe, A __ Continuous reverse drain current A —Uate-source peak voltage Voss___|__ £20 Vv — lax. power dissipation __| Po 80 Ww Gate (G) Operating and storage Ton 150 Cc Source (S) _ temperature range Tus =55~ +150] “°C @E ectrical Characteristics(Tc=25°C) _ Ttems | Symbols | ___Test Conditions Min. “[ Typ. | Max. | Units _D-ain-source breakdown voltage | Visriss Ip=lmA_Ves=0V a a __Gite threshold voltage Vesum | Io=10mA _Vos=Ves | TOT aT OV _ Ziro gate voltage drain current | Toss Vos=800V_ Ves=0V_ Ten =25'C [10 | 500 | yA __Gite-source leakage current | Tess Vos=+20V_Vos=0V nA —D ain-source on-state resistance | Rosi» | Io=15A Vos=10V T3800 __F xrward transconductance Ba Ip=15A_Vos=25V s _Trput capacitance Coss, Vos=25V [| 900 | 1400 _O:tput capacitance Coss. Ves=0V [ff 90 | 140 pF __Roverse transfer capacitance | Crss f =1MHz [| 35 | 60 ee ten Vec=30V Re =500 a eae twa | To=21A [| i50 [2507] 1s _D ode forward on-voltage Vso | ie=2XTon Vos=0V Teac [| Lo [135 [7 V. __Roverse recovery time tir lr=Iox_ d/h =100A/s Ta=25C [| 400 | | ons @T iermal Characteristics _ Items [ Symbols [Test Conditions| Min. | Typ. [ Max. | Units BE sista Runen-» | channeltoair TT 8*C/W _chermal Resistance Rinen-ey [ channel tocase T5868 CW A2-28
2SK 904 FUJI POWER MOS-FET 7 9 [esate aera FT] seocrerarcasaeya T []_ [Rostoni=t(Tat:1o=i.58,Vos=i0v_ | | 7” | Shareup Ae | a a t tery" Coc 7 EEE 2 y | Be / 2a HHH ATHY] a LOA TT TT TT TT] COCO meee an fe /ZoceeeGeee HEC tee Mh x | EPEC te » m bo eT | nS 22s soo Lo ALTE TTT TTT TT aes 7] ) SRR A Ht ae oL LIT ITT ET TTT Tt Ty Terry Cer ° 10 20 » 40 50 60 70 ‘50 ° 50 100 1s0 Ves (V) Te('C) Typical Output Characteristics On State Resistance vs. Ten 7 8 [TTte=ttis-0Gus pulse test vos=2nv | [| Ate ef LTT TT rr 1H Ty ; Li TT Lf PT yyy Ty | st] TTT 6 { Pe Te [| Tq i I I LE JLo Poe 5 ATA S | “SCOOP COC ee eae \\oRSn cee Seen Rane al ghee ET 6mN hb ee See [Ze ae eT ov [Tl] PT PPT CO) eee SEZ SY Orr ips Coors oa (_LUT# PEEP rT a-LLT TTT TT TT TT | | TTT TT rr) [| Rostoni=fiiov80us pulse test,ta=25e | | oL LL ET | “CLT TT TTT TT Tt Tr ° 2 4 6 8 10 12 16 io} i) 2 3 4 5 6 7 Vos (V) I (A) Typical Transfer Characteristic Typical Drain-Source on State Resistance vs. lo [_|_sts"Fiic:80us pulse test vos=26V,Ta2 25. 8 an Lect te anal | ee Pee seers ee ece ces a OTA Gato TSS aL Fo PETA So, See SSee ieee Me EEE COTS CYT TT TTT I rT] Pha | os | fT TTT Try yy Vea TRH || ws) LTT TTT Pry M2 =f (PCE HLL tJ Pity yt yyy rr ye [| UT CA pL Pe Oo 1 2 3 4 8 6 7 ~50 Oo 50 100 150, 1o(A) Te) Typical Forward Transconductance vs. lp Gate Threshold Voltage vs Ten A2-29
SEES FACE PT es tag) ton de i SET Sihenive save imne | ae 2 p CERRO RREEEESS LC eCoosan 4, Sen=sSne=se—Se— Io ss a iecneeeseeeaees SSAA, IN 400 2 ! HN om 8 ZA va. ——| Sa | a c ™ AA? t_} Ves om ASS) ENE iisceeescao==casa Ae eeeeee ee 12 a eet re Pery) Cie, ° ° . - Qg nc) va) Typical Input Charge Typical Capacitance vs. Vos * Ease emo pee NE SanEAVATAn Ceo eo LEE | ) CEPT TTT | Heide | SR Seas Maceseesicvaesss Q3 " TTT fiiestiveoreous pase test Po a SE CoCCeeer rt ope NS o 1 = SpSSEenNee os Ea oY FREER Hee EH HEN Oo a2 O04 O6 08 10 2 I4 16 rece) Veo (VI an i" i Pr Dissipation vs. Tc Forward Characteristics of Reverse Diode Allowable Power Dissi . eel eer | So ee | PEERS AG ortosos dM Le INA Keel Sears jase Crit aH EST SS Seat aeeth, reonag Eos oa ES SSE Foreesert ttt tithe iy oe so eceeeoe UIT CCT CTT CTI ie aie Sa". a edest eer si 4 aa corn POT ont | og | os SESE SEES io LUMI TM CTI ll Ce EL 16° 6 ie us) 16° © e Safe Operating Area Transient Thermal Impedance A2-30
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