K596 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors K596 Si N-CHANNEL JUNCTION FET
FEATURES
PCM: 0.1W（Tamb=25℃） Gate Current I G: 10mA Drain current I D: 1mA Drain-Source voltage BVGDO: -20 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Gate-Drain breakdown Voltage BVGDO IG= -100μ A -20 V Gate-Source cut-off Voltage VGS(off) VDS= 5V , ID=1μ A -0.6 -1.5 V Drain Current IDSS VDS= 5 V , VGS=0 100 800 μ A Forward Transfer Admittance |YFS| VDS= 5V , VGS=0, f=1KHz 0.4 1.2 mS Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz 3.5 pF Output Capacitance CRSS VDS= 5 V, VGS=0 f = 1MHz 0.65 pF IDSS Classification Classification A B C D E IDSS (µA) 100-170 150-240 210-350 320-480 440-800 TO- 92S 1.SOURCE 2.GATE 3.DRAIN 123
D E A c L b e TO-92S PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L θ Min 1.240 0.660 0.380 0.360 3.850 2.970 3.010 2.440 15.100 Max 1.620 0.860 0.550 0.510 4.150 3.270 3.310 2.640 15.500 Min 0.056 0.026 0.015 0.014 0.152 0.117 0.119 0.096 0.594 Max 0.064 0.034 0.022 0.020 0.163 0.129 0.130 0.104 0.610 Dimensions In Millimeters Dimensions In Inches 0.050TYP 45°TYP 1.270TYP 45°TYP θ