IKW50N60H3 INFINEON | Alldatasheet

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HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

Highspeedswitchingseriesthirdgeneration Rev.2.2,2014-03-12 HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCHSTOPTMtechnologyoffering

  • verylowVCEsat
  • lowEMI
  • Verysoft,fastrecoveryanti-paralleldiode
  • maximumjunctiontemperature175°C
  • qualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • uninterruptiblepowersupplies
  • weldingconverters
  • converterswithhighswitchingfrequency G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IKW50N60H3 600V 50A 1.85V 175°C K50H603 PG-TO247-3

Highspeedswitchingseriesthirdgeneration Rev.2.2,2014-03-12 TableofContents

Highspeedswitchingseriesthirdgeneration Rev.2.2,2014-03-12 Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 100.0 50.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 200.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 60.0 30.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 200.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC µs PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 333.0 167.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction - case Rth(j-c) 0.45 K/W Diode thermal resistance, junction - case Rth(j-c) 1.05 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W

Highspeedswitchingseriesthirdgeneration Rev.2.2,2014-03-12 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.85 2.10 2.25 2.30 V Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C 1.65 1.67 1.65 2.05 V Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 5.1 5.7 V Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C 40.0 3500.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 30.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 2960 - Output capacitance Coes - 116 - Reverse transfer capacitance Cres - 96 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=480V,IC=50.0A, VGE=15V - 315.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s IC(SC) VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C 330 - A

Highspeedswitchingseriesthirdgeneration Rev.2.2,2014-03-12 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 23 - ns Rise time tr - 37 - ns Turn-off delay time td(off) - 235 - ns Fall time tf - 24 - ns Turn-on energy Eon - 1.45 - mJ Turn-off energy Eoff - 0.91 - mJ Total switching energy Ets - 2.36 - mJ Tvj=25°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, rG=7.0Ω ,Lσ=90nH, Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr - 130 - ns Diode reverse recovery charge Qrr - 0.88 - µC Diode peak reverse recovery current Irrm - 16.9 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -598 - A/µs Tvj=25°C, VR=400V, IF=30.0A, diF/dt=1000A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) - 23 - ns Rise time tr - 31 - ns Turn-off delay time td(off) - 273 - ns Fall time tf - 24 - ns Turn-on energy Eon - 1.42 - mJ Turn-off energy Eoff - 1.13 - mJ Total switching energy Ets - 2.55 - mJ Tvj=175°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, rG=7.0Ω ,Lσ=90nH, Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr - 217 - ns Diode reverse recovery charge Qrr - 2.40 - µC Diode peak reverse recovery current Irrm - 22.9 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -307 - A/µs Tvj=175°C, VR=400V, IF=30.0A, diF/dt=1000A/µs

Highspeedswitchingseriesthirdgeneration Rev.2.2,2014-03-12 PG-TO247-3

Highspeedswitchingseriesthirdgeneration Rev.2.2,2014-03-12 t a a b b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% IC t 90% VGE vGE(t) t t iC(t) vCE(t) 90% VGE vGE(t) t t iC(t) vCE(t) tt1 t4 2% IC 10% VGE 2% VCE t2 t3

Highspeedswitchingseriesthirdgeneration Rev.2.2,2014-03-12 RevisionHistory IKW50N60H3 Revision:2014-03-12,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2010-07-26 Preliminary datasheet 2.1 2013-12-10 New value ICES max limit at 175°C 2.2 2014-03-12 Max ratings Vce, Tvj ≥ 25°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered.