2SK3773-01MR FUJI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Gate(G) Source(S) Drain(D) Note *1:Tch 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=13A,L=6.13mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:I F -ID, -di/dt = 50A/µs,VCC BVDSS,Tch 150°C=< =< =<
2SK3773-01MR FUJI POWER MOSFET 0 25 50 75 100 125 150 100 120 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 4 8 1 21 62 02 4 20V 10V 6.5V VGS=6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 04 05 06 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 10V 20V 7V6.5VVGS=6V -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=16A,VGS=10V
2SK3773-01MR FUJI POWER MOSFET - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 07 08 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=32A,Tch=25 °C VGS [V] 240V 150V Vcc= 60V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 200 300 400 500 600 700 IAS=13A IAS=20A IAS=32A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=32A
2SK3773-01MR FUJI POWER MOSFET http://www .fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]