2SK3687-01MR FUJI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=600V V GS=0V VDS=480V V GS=0V VGS=±30V ID=8A VGS=10V ID=8A VDS=25V VCC=300V I D=8A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 1.289 58.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=300V ID=16A VGS=10V L=1.74mH Tch=25°C IF=16A VGS=0V Tch=25°C IF=16A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/s kV/µs W kVrms 600 3.0 5.0 250 10 100 0.42 0.57 6.5 13 1590 2390 200 300 81 2 29 43.5 16 24 58 87 81 2 34 51 12 18 10 15 1.00 1.50 0.68 7.8 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series 200311 *1 See to Avalanche Energy Graph *2 IF -ID, -di/dt=50A/µs, VCC BVDSS, Tch 150°C<=<= <=
2SK3687-01MR FUJI POWER MOSFET 0 4 8 1 21 62 02 4 20V 10V 6.5V VGS=6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 0123456789 1 0 0.1 100 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100 0.1 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 1 02 03 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1.0 RDS(on) [ Ω ]
ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 6.5VVGS=6V -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8A,VGS=10V 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 120 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C]
2SK3687-01MR FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µA VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 0 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=16A,Tch=25 °C VGS [V] 480V 300V Vcc= 120V C [pF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25 °C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 200 300 400 500 600 700 IAS=7A IAS=10A IAS=16A EAV [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
2SK3687-01MR FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=50V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] t [sec]