2SK3683 FUJI | Alldatasheet
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DWG.NO. Fuji Electric Co.,Ltd. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. MA4LE Ĕěüčøùüÿùççøöø Fuji Power MOSFET SuperFAP-G series Target SpecificationPRELIMINARY 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25 @unless otherwise specified) Items Units Drain-Source Voltage V Continuous Drain Current A Pulsed Drain Current A Gate-Source Voltage V Repetitive and Non-Repetitive Maximum Av alanche Current A Non-Repetitive Maximum Avalanche Energy mJ *1 Maximum Drain-Source dV/dt dV DS/dt kV/us Peak Diode recovery dV/dt dV/dt kV/us *2 W W Operating and Storage ˆ Temperature range ˆ 3)Electrical Characteristics (Tch=25 unless otherwise specified) Items Symbols Test Conditions min. typ. max. Units Drain-Source Breakdown Voltage BV DSS ID=250uA V GS=0V 500 --- --- V Gate Threshold Voltage V GS(th) I D=250uA V DS=VGS 3.0 --- 5.0 V VDS=500V T ch=25ˆ --- --- 25 ÊA VGS=0V T ch=125ˆ --- --- 250 ÊA Gate-Source Leakage Current I GSS VGS=±30V V DS=0V --- --- 100 ÊA Input Capacitance C iss VDS=25V --- 1580 2370 Output Capacitance C oss VGS=0V --- 240 360 pF Reverse Transfer Capacitance C rss f=1MHz --- 12 18 Total Gate Charge Qg Vcc=250V --- 32 48 Gate to Source Charge Qgs I D=19A --- 16 24 nC Gate to Drain (Miller) Charge Qgd V GS=10V --- 12 18 Avalanche Capability I AV L=1.25mH Tch=25 ˆ 19 --- --- A Diode Forward On-Voltage V SD IF=19A,VGS=0V,Tch=25 --- 1.0 1.5 V 4) Thermal Characteristics Items Symbols Test Conditions min. typ. max. Units Channel to Case Rth(ch-c) 1.316 ˆ/W Channel to Ambient Rth(ch-a) 58.0 ˆ/W *1 L=1.25mH,Vcc=50V *2 IF≤-ID,-di/dt=50A/µs,Vcc≤BV DSS,Tch≤150°C 2SK3683-01MR (500V/0.38 Ω /19A) VGS IAR EAS Symbols VDS ID ID(pulse) ±30 Maximum Power Dissipation PD @Ta=25 Tch Tstg 2.16 150 -55 \` +150 Ratings 500 ±19 ±76 ¶--- 0.38 245.3 Zero Gate Voltage Drain Current Drain-Source On-State Resistance VGS=10V --- I DSS RDS(on) I D=9.5A ĚĬķõô÷ùôî÷ù ĚĬķõô÷ùôî÷ù