K3673

2SK3673-01MR FUJI | Alldatasheet

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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=700V V GS=0V VDS=560V V GS=0V VGS=±30V ID=5A ID=5A VDS=25V VCC=300V ID=5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 1.563 58.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D=250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=350V ID=10A VGS=10V L=4.45mH Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W kVrms 700 3.0 5.0 250 100 0.91 1.18 5 9.5 900 1350 140 210 81 2 22 33 40 60 91 4 25 37.5 8.5 13 0.90 1.50 2.75 14.0 -55 to +150 Outline Drawings [mm] *3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C< << Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series VGS=10V 200304 *4 VDS 700V *5 V GS=-30V *6 t=60sec, f=60Hz=< *1 L=4.45mH, Vcc=70V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=150°C<

2SK3673-01MR FUJI POWER MOSFET 0 25 50 75 100 125 150 100 120 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [°C] 0 5 10 15 20 25 20V 7.0V 10V 8.0V 6.5V 6.0V ID [A] VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C VGS=5.5V 0123456789 1 0 0.1 ID[A] VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 0.1 1 10 100gfs [S] ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 0 4 8 12 16 0.75 1.00 1.25 1.50 1.75 2.00 7.0V 6.5V RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 10V 20V 8.0V 6.0VVGS=5.5V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V

2SK3673-01MR FUJI POWER MOSFET -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS(th) [V] Tch [°C] 0 5 10 15 20 25 30 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25°C VGS [V] 560V 350V Vcc= 140V C [nF] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 200 300 400 500 600 700 IAS=4A IAS=10A IAS=6A EAS [mJ] starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=70V

2SK3673-01MR FUJI POWER MOSFET http://www.fujielectric.co.jp/denshi/scd/ Single Pulse Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=70V Avalanche Current I AV [A] tAV [sec] Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [ °C/W] t [sec]