2SK3525 FUJI | Alldatasheet
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UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=600V V GS=0V VDS=480V V GS=0V VGS=±30V ID=3A VGS=10V ID=3A VDS=25V VCC=300V ID=3A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC nsMin. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 2.16 35.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time t on Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions I D= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V L=9.83mH Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/µs Tch=25°C V A A V A mJ kV/µs kV/µs W 600 3.0 5.0 250 10 100 0.93 1.20 750 1130 100 150 4.0 6.0 14 21 91 4 24 36 7 10.5 20 30 8.5 13 5.5 8.5 1.00 1.50 0.7 3.5 -55 to +150 Outline Drawings Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C=< =< =<*1 L=9.83mH, Vcc=60V *2 Tch 150°C=< *4 VDS 600V<=
2SK3525-01MR FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 02468 1 0 1 2 1 4 1 6 1 8 2 0 2 2 2 4 2 6 2 8 3 0 20V 10V 7.5V 7.0V ID [A] VDS [V] Typical Output Characteristics VGS=6.5V 0123456789 1 0 0.1 ID[A] VGS[V] Typical Transfer Characteristic 0.1 1 10 0.1 100gfs [S] ID [A] Typical Transconductance 0 2 4 6 8 1 01 21 41 61 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6RDS(on) [ Ω ] ID [A] Typical Drain-Source on-state Resistance 10V 20V 7.5V 7.0VVGS=6.5V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 RDS(on) [ Ω ] Tch [°C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V 0 25 50 75 100 125 150 Allowable Power Dissipation PD=f(Tc) PD [W] Tc [ °C]
2SK3525-01MR FUJI POWER MOSFET VGS=f(Qg):ID=3A, Tch=25°C IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=300V, VGS=10V, RG=10Ω VGS(th)=f(Tch):VDS=VGS,ID=250µA -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th) [V] Tch [°C] 0 1 02 03 04 05 06 0 Qg [nC] Typical Gate Charge Characteristics VGS [V] 480V 300V Vcc= 120V 10p 100p 10n C [F] VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.1 100IF [A] VSD [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID td(on) tr tf td(off) t [ns] ID [A] 0 25 50 75 100 125 150 100 150 200 250 300 EAV [mJ] starting Tch [ °C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6A
Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T 0.01 0.02 0.05 0.1 0.2 D=0.5 Zth(ch-c) [ o C/W] t [sec] 2SK3525-01MR FUJI POWER MOSFET IAV=f(tAV):starting Tch=25°C. Vcc=60V Avalanche current I AV [A] t TD= t T Single Pulse Maximum Avalanche Current Pulsewidth tAV [sec]