K3413-05_06 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Wide spectral response range /K6C Allows same optical path design /K6C One-stage thermoelectrically cooled type

Applications

/K6C Spectrophotometers /K6C Laser monitors /K6C Flame monitors /K6C Radiation thermometers UV TO IR DETECTOR Two-color detector Wide spectral response range from UV to IR K3413-05/-08/-09 I General ratings / Absolute maximum ratings Absolute maximum ratings Active area Thermistor allowable dissipation TE-cooler allowable current Reverse voltage VR Operating temperature Topr Storage temperature Tstg Type No. Package Cooling Detector element (mm) (mW) (A) (V) (°C) (°C) Si 2.4 × 2.4 5K3413-05 InGaAs φ0.5 20 Si 2.4 × 2.4 5K3413-08 InGaAs φ1 2 Si 2.4 × 2.4 5K3413-09 TO-8 One-stage TE-cooled InGaAs φ1 0.2 1.5 -40 to +70 -55 to +85 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Measurement condition Element temperature T Spectral response range Peak sensitivity wavelength λp Photo sensitivity S λ=λp Dark current ID VR=10 mV Shunt Resistance Rsh λ=λp Rise time tr VR=0 V RL=1 k Ω 10 to 90 % Terminal capacitance Ct VR=5 V f=1 MHz Type No. Detector element (°C) (µm) (µm) (A/W) Typ. (nA) Max. (nA) (MΩ ) (cm · Hz1/2/W) (ns) (pF) Si 25 0.94 0.45 50 (pA) 100 (pA) 200 1.4 × 10 13 200 *3 60 *5 K3413-05 InGaAs -10 0.32 to Si 25 0.94 0.45 50 (pA) 100 (pA) 200 1.4 × 10 13 200 *3 60 *5 K3413-08 InGaAs -10 0.32 to Si 25 0.94 0.45 50 (pA) 100 (pA) 200 1.4 × 10 13 200 *3 60 *5 K3413-09 InGaAs -10 0.32 to *1: VR=5 V *2: VR=1 V *3: λ=655 nm *4: VR=5 V, RL=50 Ω *5: VR=0 V, f=10 kHz

Two-color detector K3413-05/-08/-09 WAVELENGTH (µm) (Typ. Ta=25 ˚C) 0.3 0.2 0.1 0.7 0.6 0.5 0.4 0.2 PHOTO SENSITIVITY (A/W) KIRDB0199EA WAVELENGTH (µm) 0.8 0.2 0.1 0.7 0.6 0.5 0.4 0.3 PHOTO SENSITIVITY (A/W) (Typ. T= -10 ˚C) K3413-08 K3413-05/-09 KIRDB0212EA REVERSE VOLTAGE (V) 0.01 10 pA 100.1 1 100 pA 1 nA DARK CURRENT (Typ. Ta=25 ˚C) KIRDB0200EA 1 µA 10 µA 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) DARK CURRENT 100 nA 1 nA 100 pA 10 nA 100 µA (Typ. Ta=25 ˚C ) K3413-08 K3413-05 K3413-09 KIRDB0213EA I Spectral response Si photodiode I Dark current vs. reverse voltage InGaAs PIN photodiode Si photodiode InGaAs PIN photodiode

Two-color detector K3413-05/-08/-09 ELEMENT TEMPERATURE ( ˚C) -40 -20 100 kΩ 1000 2 04 06 08 0 10 TΩ 1 TΩ 100 GΩ 10 GΩ 1 GΩ 100 MΩ 10 MΩ 1 MΩ SHUNT RESISTANCE (Typ. VR =10 mV) 10 GΩ -40 -20 0 40 60 80 100 ELEMENT TEMPERATURE (˚C ) SHUNT RESISTANCE 1 GΩ 10 kΩ 100 Ω 1 kΩ 100 kΩ 10 MΩ 1 MΩ 100 MΩ 100 GΩ (Typ. VR =10 mV) K3413-09 K3413-05 K3413-08 1 nF 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 100 pF 1 pF 100 fF 10 pF 10 nF (Typ. Ta=25 ˚C, f=1 MHz) K3413-05 K3413-09 K3413-08 REVERSE VOLTAGE (V) 0.01 1 pF 100.1 1 10 pF 100 pFTERMINAL CAPACITANCE (Typ. Ta=25 ˚C, f=10 kHz) I T erminal capacitance vs. reverse voltage KIRDB0202EA KIRDB0214EA KIRDB0204EA KIRDB0215EA Si photodiode InGaAs PIN photodiode Si photodiode InGaAs PIN photodiode I Shunt resistance vs. element temperature

HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. Twe-color detector K3413-05/-08/-09 Cat. No. KIRD1041E03 May 2006 DN 14 ± 0.2 WINDOW 10 ± 0.2 15.3 ± 0.2 4.4 ± 0.2 6.0 ± 0.2 10.0 ± 0.212 MIN. 0.45 LEAD InGaAs Si 10.2 ± 0.2 5.1 ± 0.2 InGaAs (ANODE) InGaAs (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR Si (CATHODE) Si (ANODE) KIRDA0156ED I Dimensional outline (unit: mm)