K3413-02

K1713_04 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Broad spectral response Suitable for spectrophotometers, flame monitors, etc. /K6C Noncooled type: Room temperature operation for easy handling One-stage thermoelectrically cooled type: Keeps the detector temperature at a constant level to make high-precision measurements.

Applications

/K6C Spectrophotometers /K6C Laser monitors /K6C Flame monitors /K6C Radiation thermometers Accessories (Optional) /K6C Heatsink for thermoelectrically cooled type A3179-03 /K6C Temperature controller for thermoelectrically cooled type C1103-04 /K6C Photosensor amplifier C2719 /K6C Amplifier for PbS and PbSe detectors C3757-02 K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR. I General ratings / Absolute maximum ratings Absolute maximum ratings Active area size Thermistor allowable dissipation TE-cooler allowable current Reverse voltage VR Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material *1 Package Coolin g Detector (mm) (mW) (A) (V) (°C) (°C) Si 2.4 × 2.4 5K1713-01 PbS1.8 × 1.8 100 * 2 Si 2.4 × 2.4 5K1713-02 ➀ /STO-5 Non- cooled PbSe 1.8 × 1.8 100 *2 Si 2.4 × 2.4 5K3413-01 PbS1.8 × 1.8 100 * 2 Si 2.4 × 2.4 5K3413-02 ➁ /STO-8 One-stage TE-cooled PbSe 1.8 × 1.8 0.2 1.5 100 *2 -30 to +50 -55 to +50 I Electrical and optical characteristics (Typ., unless otherwise noted) Measurement condition Element temperature T Peak sensitivity wavelength λp Photo sensitivity S λ=λp Shunt resistance or dark resistance λ=λp Rise time tr VR=0 V RL=1 kΩ 10 to 90 % Type No. Detector (°C) (µm) (A/W) (MΩ ) (cm · Hz1/2/W) (µs) Si 0.94 0.45 300 1.4 × 10 13 0.2 *4 K1713-01 PbS 25 2.2 6 × 10 4 (V/W) 0.2 to 2 5 × 10 10 *3 200 Max. *5 Si 0.94 0.45 300 1.4 × 10 13 0.2 *4 K1713-02 PbSe 25 4.0 5 × 10 2 (V/W) 0.5 to 1.8 5 × 10 8 *3 3 Max. *5 Si 25 0.94 0.45 300 1.4 × 10 13 0.2 *4 K3413-01 PbS-10 2.4 3 × 10 5 (V/W) 0.5 to 10 1 × 10 11 *3 600 Max. *5 Si 25 0.94 0.45 300 1.4 × 10 13 0.2 *4 K3413-02 PbSe -10 4.1 1.5 × 10 3 (V/W) 1.5 to 5 1 × 10 9 *3 5 Max. *5 *1: Window material S: sapphire glass *2: Maximum supply voltage *3: Light source 500 K black body Supply voltage: 15 V Chopping frequency: 600 Hz, Load resistance: nearly equal to element dark resistance Noise bandwidth: 60 Hz Input energy: 4.8 µW/cm 2 (PbSe: 16.7 µW/cm2) *4: λ=655 nm *5: 0 to 63 %

Two-color detector K1713/K3413-01, -02 WAVELENGTH (µm) (Typ. Ta=25 ˚C) 100 RELATIVE VALUE (%) T= -10 ˚C T=25 ˚C KIRDB0282EA WAVELENGTH (µm) (Typ. Ta=25 ˚C) 1013 1014 0.2 1012 D* (cm · Hz /W)λ WAVELENGTH (µm) (Typ. Ta=25 ˚C) 3.51.5 2 2.5 3 100 RELATIVE VALUE (%) T=25 ˚C T= -10 ˚C I Spectral response KIRDB0058EE Si photodiode PbS photoconductive detector PbSe photoconductive detector KIRDB0283EA I Cooling characteristics of TE-cooler CURRENT (A) (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) -50 -30 -20 -40 -10 ELEMENT TEMPERATURE ( ˚C) KIRDB0276EA I Current vs. voltage characteristics of TE-cooler (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) VOLTAGE (V) 1.0 0.4 1.6 0.6 0.2 1.4 0.8 1.2 CURRENT (A) KIRDB0277EA

Two-color detector K1713/K3413-01, -02 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. Cat. No. KIRD1029E05 May 2004 DN 0.4 LEAD 30 MIN. 8.1 ± 0.2 3.3 ± 0.2 4.3 ± 0.2 6.1 ± 0.2 WINDOW 5.5 ± 0.2 9.2 ± 0.3 5.1 ± 0.2 PbS PbSe Si Si (N) Si (P) PbS, PbSe PbS, PbSe 14 ± 0.2 WINDOW 10 ± 0.2 15.3 ± 0.2 5.1 ± 0.2 6.1 ± 0.2 10.0 ± 0.212 MIN. 0.45 LEAD PbS PbSe Si SAPPHIRE GLASS 10.2 ± 0.2 5.1 ± 0.2 PbS, PbSe PbS, PbSe TE-COOLER (-) TE-COOLER (+) THERMISTOR Si (-) Si (+) 10.2 ± 0.2 5.1 ± 0.2 ➀ K1713-01, -02 ➁ K3413-01, -02 I Dimensional outline (unit: mm) KIRDA0041EE KIRDA0043EE I Thermistor temperature characteristic ELEMENT TEMPERATURE ( ˚C) (Typ.) -40 103 30-20 10 20-30 -10 0 106 105 104 RESISTANCE ( Ω ) KIRDB0278EA