2SK2872-01MR FUJI | Alldatasheet
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2SK2872-01MR N-channel MOS-FET FAP-IIS Series 450V 1,2Ω ±8A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V GS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 450 V Continous Drain Current I D ±8 A Pulsed Drain Current I D(puls) ±32 A Gate-Source-Voltage V GS ±35 V Repetitive or Non-Repetitive (T ch ≤ 150°C) I AR 8 A Avalanche Energy E AS 164.1 mJ Max. Power Dissipation P D 30 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C L=4.70mH,Vcc=45V - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage BV DSS ID =1mA V GS =0V 450 V Gate Threshhold Voltage V GS(th) ID =1mA V DS= V GS 3,5 4,0 4,5 V Zero Gate Voltage Drain Current I DSS V DS =450V T ch =25°C 10 500 µA V GS =0V T ch =125°C 0,2 1,0 mA Gate Source Leakage Current I GSS V GS =±35V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =4A V GS =10V 1,0 1,2 Ω Forward Transconductance g fs ID =4A V DS =25V 2 4 S Input Capacitance C iss V DS =25V 540 810 pF Output Capacitance C oss V GS =0V 100 150 pF Reverse Transfer Capacitance C rss f=1MHz 45 70 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =300V 13 20 ns t r ID =8A 40 60 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) V GS =10V 45 70 ns t f R GS =10 Ω 25 40 ns Avalanche Capability I AV L = 4,70mH T ch =25°C 8 A Diode Forward On-Voltage V SD IF =2xI DR V GS =0V T ch =25°C 1,1 1,65 V Reverse Recovery Time t rr IF =I DR V GS =0V 450 ns Reverse Recovery Charge Q rr -dI F /d t=100A/µs T ch =25°C 3,7 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-c) channel to case 4,17 °C/W R th(ch-a) channel to air 62,5 °C/W
N-channel MOS-FET 2SK2872-01MR 450V 1,2Ω ±8A 30W FAP-IIS Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. T ch Typical Transfer Characteristics ID =f(V DS ); 80µs pulse test; T C =25°C R DS(on) = f(T ch ): ID=4A; VGS=10V ID =f(V GS ); 80µs pulse test; V DS =25V; T ch =25°C ID [A] 1 R DS(ON) [ Ω ] ID [A] 3 V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source-On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch R DS(on) =f(I D ); 80µs pulse test;T C =25°C g fs =f(I D ); 80µs pulse test; V DS =25V; T ch =25°C V GS(th) =f(T ch ); I D =1mA; V DS =V GS R DS(ON) [ Ω ] g fs [S] 5 V GS(th) [V] 6 ID [A] → ID [A] → T ch [°C] → Typical Capacitances vs. V DS Typical Gate Charge Characteristic Forward Characteristics of Reverse Diode C=f(V DS ); V GS =0V; f=1MHz VGS=f(Qg): ID=8A; Tc=25°C ↑ ↑ IF =f(V SD ); 80µs pulse test; V GS =0V C [F] 7 V DS [V] 8 V GS [V] IF [A] 9 V DS [V] → Qg [nC] → V SD [V] → Avalanche Energy Derating Safe operation area Eas=f(starting Tch): Vcc=45V; I AV =8A ID =f(V DS ): D=0,01, Tc=25°C ↑Z th(ch-c) [K/W] Transient Thermal impedance ↑ 10 ↑ 12 Z thch =f(t) parameter:D=t/T Eas [mJ] ID [A] Starting Tch [°C] → V DS [V] → t [s] → This specification is subject to change without notice!
N-channel MOS-FET 2SK2872-01MR 450V 1,2Ω ±8A 30W FAP-IIS Series > Characteristics This specification is subject to change without notice! Power Dissipation P D =f(T C ) 100 125 0 0 0 0 0 0 0 T C [°C] P D / P Dmax [%]