K2651

2SK2651-01MR FUJI | Alldatasheet

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2SK2651-01MR N-channel MOS-FET FAP-IIS Series 900V 2,5Ω 6A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V GS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings ( T C =25°C) , unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 900 V Continous Drain Current I D 6 A Pulsed Drain Current I D(puls) 24 A Gate-Source-Voltage V GS ±30 V Repetitive or Non-Repetitive (T ch ≤ 150°C) I AR 6 A Avalanche Energy E AS 71,9 mJ Max. Power Dissipation P D 50 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (T C =25°C) , unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID =1mA V G S =0V 900 V Gate Threshhold Voltage V GS(th) ID =1m A V DS = V GS 3,5 4,0 4,5 V Zero Gate Voltage Drain Current I DSS V D S =900V T c h =25°C 10 500 µA V GS =0V T ch =125°C 0,2 1,0 mA Gate Source Leakage Current I GSS V G S =±30V V D S =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =3A V G S =10V 1,87 2,5 Ω Forward Transconductance g fs ID =3A V D S =25V 4 S Input Capacitance C iss V D S =25V 900 pF Output Capacitance C oss V G S =0V 130 pF Reverse Transfer Capacitance C rss f=1MHz 70 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =600V 25 ns t r ID =6A 80 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) V GS =10V 70 ns t f R GS =1 0 Ω 40 ns Avalanche Capability I AV L = 100µH T c h =25°C 6 A Diode Forward On-Voltage V SD IF =2x I DR V G S =0V T c h =25°C 1,0 V Reverse Recovery Time t rr IF = I DR V G S =0V 850 ns Reverse Recovery Charge Q rr -d I F /d t=100A/µs T c h =25°C 8,5 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-c) channel to case 3,125 °C/W R th(ch-a) channel to air 62,5 °C/W

N-channel MOS-FET 2SK2651-01MR 900V 2,5Ω 6A 50W FAP-IIS Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. T ch Typical Transfer Characteristics ID =f(V DS ); 80µs pulse test; T C =25°C R DS(on) =f(Tch): I D =3A; V GS =10V ID =f(V GS ); 80µs pulse test;V DS =25V; T ch =25°C ID [A] 1 R DS(ON) [ Ω ] ID [A] 3 V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source-On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch R DS(on) =f(I D ); 80µs pulse test; T C =25°C g fs =f(I D ); 80µs pulse test; V DS =25V; T ch =25°C V GS(th) =f(T ch ); I D =1mA; V DS =V GS R DS(ON) [ Ω ] g fs [S] 5 V GS(th) [V] 6 ID [A] → ID [A] → T ch [°C] → Typical Capacitances vs. V DS Avalanche Energy Derating Forward Characteristics of Reverse Diode C=f(V DS ); V GS =0V; f=1MHz E as =f(starting T ch ); V CC =90V; I AV =6A IF =f(V SD ); 80µs pulse test; V GS =0V C [F] 7 Eas [mJ] IF [A] 9 V DS [V] → Starting Tch [°C] → V SD [V] → Allowable Power Dissipation vs. T C Safe operation area P D =f(Tc) ID =f(V DS ): D=0,01, Tc=25°C ↑Z th(ch-c) [K/W] Transient Thermal impedance ↑ 10 ↑ 12 Z thch =f(t) parameter:D=t/T P D [W] ID [A] T c [°C] → V DS [V] → t [s] → This specification is subject to change without notice!