2SK2642-01MR FUJI | Alldatasheet
Document overview
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Technical content
Features
V GS=±35V Guarantee Avalanche-proof
Applications
General purpose power amplifier
2SK2642-01MRFUJI POWER MOSFET ID [ A ] 0 5 10 15 20 25 30 35 5.5V 6.5V 10V VGS=20V VDS [V] ID [A] Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25 o C 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 7V6.5V5.5V 6V VGS= RDS(on) [Ω ] Typical drain-source on-state resistance RDS(on)=f(ID):80µs pulse test, Tc=25 o C 0123456789 1 010 Typical transfer characteristic ID=f(VGS):80µs pulse test,VDS=25V,Tch=25 o C ID [A] VGS [ V ] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 max. typ. Drain-source on-state resistance RDS(on)=f(Tch):ID=7.5A,VGS=10V RDS(on) [ Ω ] Tch [ o 110 Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25 o C gfs [s] ID [A] -50 0 50 100 1500.0 1.0 2.0 3.0 4.0 5.0 6.0 min. typ. max. Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS VGS(th) [V] Tch [ o C ]
FUJI POWER MOSFET 2SK2642-01MR 210p 100p 10n Crss Coss Ciss Typical capacitances C=f(VDS):VGS=0V,f=1MHz C [F] VDS [V] 0 20 40 60 80 100 120 140 160 1800 100 150 200 250 300 350 400 Vcc=100V 250V 400V 100V 250V Vcc=400V VGS [V] VDS [V] Typical gate charge characteristic VGS=f(Qg):ID=15A,Tc=25 o C Qg [nC] Tch=25 o C typ. Forward characteristic of reverse of diode IF=f(VSD):80µs pules test,VGS=0V IF [A] VSD [V] 0 50 100 1500 Power Dissipation PD=f(Tc) PD [W] Tc [ o C ] 310 1µs t=0.01µs Safe operating area ID=f(VDS):D=0.01,Tc=25 o C DC 100ms 10ms 1ms 100µs 10µs VDS [V] ID [A] 0.5 0.2 0.02 0.05 0.1 0.01 Transient thermal impedande Zthch=f(t) parameter:D=t/T Zthch-c [K/W] t [s]
FUJI POWER MOSFET 2SK2642-01MR 0 50 100 1500 100 Avalanche energy derating Eas=f(starting Tch):Vcc=50V,IAV=15A Eas [mJ] Starting Tch [ o C ]