2SK2469-01MR FUJI | Alldatasheet
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2SK2469-01MR N-channel MOS-FET FAP-II Series 300V 1Ω 5A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V GS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 300 V Drain-Gate-Voltage(R GS =20K Ω ) V DGR 300 V Continous Drain Current I D 5 A Pulsed Drain Current I D(puls) 20 A Gate-Source-Voltage V GS ±30 V Max. Power Dissipation P D 30 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID =1mA V GS =0V 300 V Gate Threshhold Voltage V GS(th) ID =1mA V DS= V GS 3,5 4,0 4,5 V Zero Gate Voltage Drain Current I DSS V DS =300V T ch =25°C 10 500 µA V GS =0V T ch =125°C 0,2 1,0 mA Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =2,5A V GS =10V 0,6 1,0 Ω Forward Transconductance g fs ID =2,5A V DS =25V 1,5 3 S Input Capacitance C iss V DS =25V 500 750 pF Output Capacitance C oss V GS =0V 120 180 pF Reverse Transfer Capacitance C rss f=1MHz 60 90 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =150V 10 15 ns t r ID =5A 20 30 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) V GS =10V 30 45 ns t f R GS =10 Ω 15 25 ns Avalanche Capability I AV L=100µH T ch =25°C 5 A Diode Forward On-Voltage V SD IF =2xI DR V GS =0V T ch =25°C 1,1 1,7 V Reverse Recovery Time t rr IF =I DR V GS =0V 180 ns Reverse Recovery Charge Q rr -dI F /d t=100A/µs T ch =25°C 1,5 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 62,5 °C/W R th(ch-c) channel to case 4,17 °C/W
N-channel MOS-FET 2SK2469-01MR 300V 1Ω 5A 30W FAP-II Series > Characteristics Typical Output Characteristics Drain-Source On-State Resistance Typical Transfer Characteristics ID =f(V DS ); 80µs pulse test; T C =25°C R DS(on) = f(T ch ); I D =2,5A; V GS =10V ID =f(V GS ); 80µs pulse test; V DS =25V; T ch =25°C ID [A] 1 R DS(ON) [ Ω ] ID [A] 3 V DS [V ] → T ch [°C ] → V GS [V ] → Typical Drain-Source On-State-Resistance Typical Transconductanc e Gate Threshold Voltage R DS(on) =f(I D ); 80µs pulse test; T C =25°C g fs =f(I D ); 80µs pulse test; V DS =25V; T ch =25°C V GS(th) =f(T ch ); I D =1mA; V DS =V GS R DS(ON) [ Ω ] g fs [S] 5 V GS(th) [V] 6 ID [A ] → ID [A ] → T ch [°C ] → Typical Capacitances Typical Gate Charge Characteristics Forward Characteristics of Reverse Diode C=f(V DS ); V GS =0V; f=1MHz V GS =f(Qg); I D =5A ↑ ↑ IF =f(V SD ); 80µs pulse test C [pF] V DS [V] 8 V GS [V] IF [A] 9 V DS [V ] → Qg [nC ] → V SD [V ] → Power Dissipation Safe Operation Area P D =f(Tc) ID =f(V DS ): D=0,01, Tc=25°C ↑Z th(ch-c) [K/W] Transient Thermal impedance ↑ 10 ↑ 12 Z thch-c =f(t) parameter:D=t/T P D [W] ID [A] T c [°C] → V DS [V ] → t [s ] →