K2101 FUJI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
2SK2101-01MR N-channel MOS-FET FAP-IIA Series 800V 2,1Ω 6A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V GS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (T C =25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 800 V Drain-Gate-Voltage(R GS =20K Ω ) V DGR 800 V Continous Drain Current I D 6 A Pulsed Drain Current I D(puls) 24 A Gate-Source-Voltage V GS ±30 V Max. Power Dissipation P D 50 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (T C =25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID =1mA V GS =0V 800 V Gate Threshhold Voltage V GS(th) ID =1mA V DS= V GS 2,5 3,0 3,5 V Zero Gate Voltage Drain Current I DSS V DS =800V T ch =25°C 10 500 µA V GS =0V T ch =125°C 0,2 1,0 mA Gate Source Leakage Current I GSS V GS =±30V V DS =0V 10 100 nA Drain Source On-State Resistance R DS(on) ID =3A V GS =10V 1,7 2,1 Ω Forward Transconductance g fs ID =3A V DS =25V 3 6,5 S Input Capacitance C iss V DS =25V 1200 1800 pF Output Capacitance C oss V GS =0V 120 180 pF Reverse Transfer Capacitance C rss f=1MHz 40 60 pF Turn-On-Time t on ( ton =t d(on) +t r ) t d(on) V CC =600V 25 40 ns t r ID =5A 25 40 ns Turn-Off-Time t off (t on =t d(off) +t f) t d(off) V GS =10V 85 130 ns t f R GS =10 Ω 45 70 ns Avalanche Capability I AV L=100µH T ch =25°C 6 A Continous Reverse Drain Current I DR T C =25°C 6 A Pulsed Reverse Drain Current I DRM T C =25°C 24 A Diode Forward On-Voltage V SD IF =2xI DR V GS =0V T ch =25°C 1,1 1,6 V Reverse Recovery Time t rr IF =I DR V GS =0V 400 ns Reverse Recovery Charge Q rr -dI F /d t=100A/µs T ch =25°C 1,5 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 62,5 °C/W R th(ch-c) channel to case 2,5 °C/W FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
N-channel MOS-FET 2SK2101-01MR 800V 2,1Ω 6A 50W FAP-IIA Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. T ch Typical Transfer Characteristics ↑ 1 ↑ 2 ↑ 3 ID [A] R DS(ON) [ Ω ] ID [A] V DS [V] → T ch [°C] → V GS [V] → Typical Drain-Source-On-State-Resistance vs. I D Typical Forward Transconductance vs. I D Gate Threshold Voltage vs. T ch ↑ 4 ↑ 5 ↑ 6 R DS(ON) [ Ω ] g fs [S] V GS(th) [V] ID [A] → ID [A] → T ch [°C] → Typical Capacitance vs. V DS Typical Input Charge Forward Characteristics of Reverse Diode ↑ 7 ↑ 8 ↑ ↑ 9 C [nF] V DS [V] V GS [V] IF [A] V DS [V] → Q g [nC] → V SD [V] → Allowable Power Dissipation vs. T C Safe operation area ↑Z th(ch-c) [K/W] Transient Thermal impedance ↑ 10 ↑ 12 11 P D [W] ID [A] T c [°C] → V DS [V] → t [s] → This specification is subject to change without notice!