2SK1917-MR FUJI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
2SK1917-MR FUJI POWER MOS-FET PS N-CHANNEL SILICON POWER MOS-FET F II S E R " ES @ Features HW Outline Drawings @ High speed switching 0105 ya yge yt SHE © Low on-resistance fl — Tense ® No secondary breakdown i <4 PT tL ® Low driving power Bes, 3] 4 J * ® High voltage 3 | ae @V.3=+30V Guarantee "| je@o} Applications | 4 2500 3'Source @ Switching regulators ae euPS once ft Looe 2sas02 25002 [ ansoz ®@DC-DC converters General purpose power amplifier — SCH MH Max. Ratings and Characteristics Wi Equivalent Circuit Schematic @Ab: olute Maximum Ratings(Tc=25°C) (un ess otherwise specified) — Drain (D) Items [ Symbols [Ratings | Units Drain-source voltage Vos Vv Drain-gate voltage (Res = 20KQ) Voce Vv Con inuous drain current I, A Gate (G) Pulsed drain current _ Tocoursy A Source (S) Gate -source voltage Vos Vv Ma>. power dissipation Py 50 W Ope ating and storage Cc temperature range Ta =55~ +150) °C @Elec trical Characteristics(Te=25°C) (unless otherwise specified) Items. | Symbols |" Test Conditions | ‘Min. [ Typ. | Max. | Units Draia-source breakdown voltage Viowwss Inp=ImA___Ves=0V [20 7 | Vv Gate threshold voltage Vesam Ip=1mA___ Vos= Vos 5.0 Vv , Vos =250V [ Ta=ac [ [10 7) 500 [vA Zerc gate voltage drain current Iuss _ Vee=0V T= 1250 >.9 Lo mA Gate -source leakage current Tess Ves=+30VVps=0V 10 | 100 | nA Drai i-source on-state resistance Rosion Vos=10V 03) 04 | 2 Forvard transconductance Bs | Tb =5A Vs =25V 2.0 s Inpu: capacitance Cass Vos =25V [| 570 | 860 Outy ut capacitance Coss Ves=0V [| 40 [2107] pF Reverse transfer capacitance Css | sf = IMHz i— Turon ine bs tea} yazigov Gea Le | 2080 (teo= trom tte) tr on | [40 | 60] — Ves=10V ns Tort -off time tory tore R=250 | 100 [150 (ten = torn tty) ty “ [ ys0 75. _ Continuous reverse drain current Ton re ee ee) A Pulsid reverse drain current Tox [A Reverse recovery time te T-=Ton Vos=0V [40 | as Reverse recovery charge Qe qde/de=100A/us Ty=25C | [08 | | ac @Thei mal Characteristics Items. | Symbols [Test Conditions ‘| Min. | Typ. | Max. | Units Thermal resistance Riverca | channel to case ee A A2-269
FUJI POWER MOS-FET 2SK1917-MR oN i Characteristics 20 10, CT = CT TTT) enna ioe a A anes eoeeeeeee Corr CCooR Pere Cerree reece Cet] ee a a ytd oe oe HEE eee ee COC ae oar Zoneeeeesr seesaevee7<aez7aicae » EEE HEA iv ee > EOPEREEEEEEEED =" HEE i 2, — a a seam peer Lee beet -———— oe eH Ze FEEEEEEEE ESE PE 5 a See} eC TY 4 o Vos(V) Tea"C) Typical Output Characteristics Drain-Source on-State Resistance vs. Ten a “ive sar sor ear aa aa vise ee Mes eeee TTT He Snennn _— 7 HE eT SEEEEES| | JUD oe ee A | \\ 4 722 eee “a aft |] Cee HCE I a Tp » to poe R UOC ee ee UCU ON ee ea @ “SOOT or f—| } Viavanrinn TS tA [iat hale alt VA, a ee SSeS FESS Eileen ment ola a | oe aan oO Ey 10 0 5 10 6 2 Ves(V) lolA) Typical Transfer Characteristics Typical Drain-Source on-State Resistance vs. lo 3 6 Pee peee eee ee a LT TW vests +0 t29): Voce ven, Ibm tea EERE satel Lp He PPE EDT mex eCUEC CCC eee : CoeCer ere errr COPE COCCer Cee cee 4 eco eee Peco CoC Baas cornea anenena DACP RSS eet +H afs= fo) : 80s pulse test HEF F REE inn ats Lory veresv taczbe Vest - _ an GA Et min | a A aaana i i i i ie A Gee [TT TEE Try ry HEE ; MBEGUUSSSSEEECEEEE HHH PEE Cherry ALi Ti iit i ye PTT) tA) TaCC) Typical Forward Transconductance vs. |p Gate Threshold Voltage vs. Toh A2-270
»~2SK1917-Mr FUJI POWER MOS-FET ——— Se a ee ee 250; 120 == === === SSS (TT DTT Se a ua teeateeiteatcmaner ayaa SCURERTTOMELeseee eassusHbstteaten?s72f cit | Ee Pe Ce eee See eeeeee CON vec COO eS ecissS so PLL 2 oov i rrr oo aaaeaeas aun: ZF any ab ay nn RRSEEEEE EERE ES BREA PaLAAR? 40 47 40 ERE EE CNC CE Pe ps cL eer) ee ARES 2TH vee ae Ree TTTLATLARALL eT ot LETT) ol POCCSSSSSS eee 0 i) 10 20 30 40 oO 10 20 30 40 50 Vos(V) Qg(nc) Typical Capacitance vs. Vos Typical Input Charge “=== SSS “CTT Fp F0 es oe wat SEE CAPE say 4 ae a CI im [) po ot He SEES SES et tanese | Po FERRER Re a go SO) , A » fe ; ,. CoE wm om LLEEIA TTT | HESS a af tH aoe cece Re SH PTT Py rr NY POT SERRE ER EEE SS ere eS, Veo(V) TelC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Te ee, From (Vor: DHO0 1, Tea 25 meal i 0 a nem Set et PTT ON 2 | AS eS See Se fo=0s) 1 A ==: cee a foc THN SEAS H Peg sees creme ones ons rg | | EHEC pepe acriciee”-casail | SETA wg es NT Ll wo es LUI TT th 7 UT EERE ors HE Se SS 7 at] if ZCI o de i i i ll NT TO T_T TTT 0 1o* 1o8 10? 17 10° ‘o' 10° io 0% 10 t(S) Vos (V) Transient Thermal Impedance Safe Operating Area A2-271
1, LOAF BOSONS (MOR. HEE, Fo A SE) MR OUMR HORM, FORMAT LD MOF EES BBENSIEMHOET COA FOPIMANTHS WEEE S NEMS, ZONRORMMROLMBEAS LT. F— SEMBLTC EAM.
2 AAR OPCML TS SIGMA, BLUM SHA LARK SAME RMT SENTHO, KA OPIL ko TLR
Hi, TOMMEAID ICAL TS B RAE E 1213 HCO ABET 3 EO TED REA, 3. ALMMBATNRORALEREOMLICBO TORS, LAL. FRAN S SHEETS 3 RHE S OAT, SLBAW EWAN ROMA, BRE LTADPA, ARGC KE SMI MT SINE AMAIA ET Sek IAEA MUTT, HMDA ILARET EERO AMO FREME TRS, 4 BAFTA IAML TOS MRL, MOBS MORE NS PLO 2 EAT? CAMB ANS LE SRL TBOA TET, 1oyea-# OAM RE + MS BS HHA) + MAL + LP aa SARA F AP ED a TO + RETA RRL RU PRE RAO bE 5. HAR IA MORIA E. POLS NCE MEME HOD RA SS RRS OP ROSSER, PMCEL ERAS MMOL, THATS EXD, LOAF OZONBE CAS OMIM SIS, TLIMAM SAAB LWA MM BMLTE, MEMBME LEED. No IT IT VAFSRE, REMOLDOWBISEREM ES CEU ST, URE CIR, AAA E) + APR ALE BM + ERS Re + FRM IA OT + PR / BAR Beit + BBMRO ONSET 6. MY CRA MERIES BORE NS PEO EF GIRMICIS, RA FO TIMONREMA LETS HEV, PBS » ATL EARAE TAS + AF Fa UR a OTR aR BS + RR
2 BAFAISO—PSASRMBOWMMAMBUI OTL, MHL SAUORMMLRCH,
8B CMAP ATFONBIO PMO MAH OK LES. RSM F Saw TRE Ak, TOMERM AER L TK REO, AUER OFPRIZ EE EOE DILIE CE RUA te SAMS i LTRS FZ OWE CGA THEE 9 ENTS BA, BLree@atstt BFBRAB NTH SRRG HA SRRMIER (03) 5388-7657 MRA MAMA. em (06) 455-6467 151 (EAMES HE e B (03) 5388-7681 ERR (0764) 41-1231 mst ieee eee RAKERM cm (03) 5988-7600 CUBA 2 (0878) 51-0185 (03) 5388-7651 RHE te (0263) 36-6740 PSK MREMET B (052) 204-0205 ee te (03) 5288-7685 ANSEALKMORAOMAT mm (092) 731-7192 a