2SK1815 FUJI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
2S K1 81 5 SIPMOS® FUJI POWER MOS-FET LEE ccc c cel N-CHANNEL SILICON POWER MOS-FET F Ill S E R | ES @ Features Outline Drawings @High current @ Low no-resistance wg ® No secondary breakdown [4 @ Low driving power | <4 t @High forward Transconductance Lr q Applications Tg Motor controllers 1 4 ©@Genaral purpose power amplifier \\ al 2 on @DC-DC converters hasis.ac [soe M@ Max. Ratings and Characteristics Se @Absolute Maximum Ratings(Tc= 25°C) . an . rome [Symbois [Ratings] Units Wi Equivalent Circuit Schematic Drain-source voltage | Voss | 60 | V. Continuous drain current A ; Pulsed drain current A Drain (D) Continuous reverse drain current | Ip | S35 s| OA Gate-source peak voltage Vv Max. power dissipation WwW Operating and storage Cc Gate (G) temperature range =55~ +150] “°C Source (S) @€Electrical Characteristics(Tc= 25°C) Ttems [ Symbols [Test Conditions | Min._| Typ. | Max. | Units Drain-source breakdown voltage Ibp=ImA__Vcs=0V. | oo | | fv Gate threshold voltage Vv i Vos =60V [Ta=2ac | | 0 | 500 | uA Gate-source leakage current Ves=+20V__Vos=0V. | [| 10 ~{ 100 [| nA : : Tp=17.5A_Ves=4V. [| 37 [56 [ma Drainsourceonstate resitance Co Ween aT Forward transconductance Ip=17.5A Vos =25V [wo [is | |S Input capacitance Vos =25V |__| 1800 | 2700 Output capacitance Ves=0V [| _ 620 | 930 | pF Reverse transfer capacitance f{ =1MHz [| _240 | 360_| Turn-on time ton Vec=30V Ip=35A re (ton = tacon + tr) V=10v |_| 60 | 9% | Turn-off time tr yon [380330] (torr = tawon +t) ft | : | | 50 [230 _| Diode forward on-voltage Tp=2X]ox Ves=0V Ta=25C | [| 1.35 [| 2.0 | V Reverse recovery time Tr=Ion d:/dk=100A/us Ta=25C | | 60 | ‘| ns @Thermal Characteristics Items [ Symbols | Test Conditions | Min._| Typ. Max. | Units , Rogen | channel toair TTT 30.0 | CW Thermal resistance Ruwn-g | channel tocase 3125 | CW
SIPMOS® FUJI POWER MOS-FET 2SK 1815 a Characteristics HARE Tane CeCe eee 60 7 i COC ea HA SSS SSeS e Seed SS ee tH a oe) HEE EHH om eH oi CECCPPE Err ere HAS | o PEE eer ee , CESSES EEE R Prete ny | esos TTT Teer er , Bera A Wa ca) [Peer er me TT 20) Pec ann Y Ae ee oa o> a ) SRR eee CeCe WoT HEE EE ) AS off Titre L oot a o 2 4 - Vos (VI Tox CO) Typical Output Characteristics On State Resistance vs. To, DOOCoOoO °"Teter] sor [sav Teo] | | | Vent ve te nett THT Ly Sateen [| y one al Perry PTET Trey rept tt CECE are eee eee i a - Hy ewe | COCCI ee HE++e +H EeEEEEEE HEATH peeves [| ‘i. | COT FACE EEE ACE ET “oe ya | (A) (a) so on eee Soe Lett Tye ry ey tt SSS PoE oF LILY TTTITTi tts | . 0 2 4 6 cy 20 40 60 Ves(V) ICA) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. I> 2 — A EH To aa |_| Paseeeeee so Cy mnDZ rt Lett | PTT LI pa Crs eC e LY ECL Press SoS LA Pe coneeseeneneainnpcces IAT TTT TT gRSU05 00000 00000000000 [lt tetonseowmnen | | | PSS Vandy taetee Prose as ff | LL Ves | of RECO Ee se fTiTtiyTy TTT ) yo COCRSARCOOCCT ARS WEP PP HE isda LT Coo COS Hee Hebsataaasensnsaseii ALL iri TT ob COOP 5 5 , Ip(A3 Ten (°C) Typical Forward Transconductance vs. |p Gate Threshold Voltage vs. Ten,
2SK 1815 SIPMOS® FUJI POWER MOS-FET ——— Fp Ont ved veenoy. tote FH Herren TT EEE EH TLL CW Tern’ a id <a H CET Is TTT TT Kes Apert ale CEE NO an i ase Ona eNO) | LEAS, PSS RSS oe ARSRGE0)/ /GEROROnn nee =| Yi c COTS errr rer Vos ALT TTT TTT ET] Vs ap ABA SEEE Tos fo EC, He see BORSA U AREA RRREEE bee CO 0 ae DST oak e EEE e LOSsee EE ° *° Vos(V) Qg(nc) Typical Capacitance vs. Vos Typical Input Charge C ee 60 Eneipnrcoces= se [TTT TTT TTT Pry yyy ray Pr) x CoCr SERN See SUERUEE/AS00400 HN HH EER EES | PEEP TT ING TTT Poe eee ee > TTTThLttLiN LLL m CT TTT ow) CN oe td LETT TPT PP Nt Bee SS LT NTT aa COUPEE XT 00: FERRARA 4 _ LOPE atti Titi t iti ts ° 08 10 1S o 50 100 150 Vsp(V) TCO) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc nl 1 a o CHE TE at SESS as eerie eee st eee eh, ERS Noa
5 Tm TTT ee NY iS
Ren Ee er Ft iex tv oeaot, A com tert TT | a Basse tere tit 7 a aN of Lill 1 LUT SS 55st eee ees 0 0 0 0 0 0 io ©. 5 SE t(S) Vos(V) Transient Thermal Impedance Safe Operating Area