SKP15N60_08 INFINEON | Alldatasheet

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Technical content

1 Rev. 2.3 Sep 08 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

  • 75% lower Eoff compared to previous generation combined with low conduction losses
  • Short circuit withstand time – 10 µs
  • Designed for: - Motor controls - Inverter
  • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
  • Very soft, fast recovery anti-parallel EmCon diode
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1 for target applications
  • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C VCE(sat) Tj Marking Package SKP15N60 600V 15A 2.3V 150°C K15N60 PG-TO-220-3-1 SKW15N60 600V 15A 2.3V 150°C K15N60 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 62 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 62 Diode forward current TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 62 A Gate-emitter voltage VGE ±20 V Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 139 W Operating junction and storage temperature Tj , Tstg -55...+150 °C Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Ts 260 °C

1 J-STD-020 and JESD-022

2 Allowed number of short circuits: <1000; time between short circuits: >1s. PG-TO-220-3-1 (TO-220AB) G C E PG-TO-247-3

2 Rev. 2.3 Sep 08 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.9 Diode thermal resistance, junction – case RthJCD 1.7 Thermal resistance, junction – ambient RthJA PG-TO-220-3-1 PG-TO-247-3-1 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =15A Tj =25 °C Tj =150 °C 1.7 2.3 2.4 2.8 Diode forward voltage V F VGE =0V, IF =15A Tj =25 °C Tj =150 °C 1.2 1.4 1.25 1.8 1.65 Gate-emitter threshold voltage VGE(th) IC =400 µ A, VCE =VGE 3 4 5 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 2000 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =15A 3 10.9 - S Dynamic Characteristic Input capacitance Ciss - 800 960 Output capacitance Coss - 84 101 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 52 62 pF Gate charge QGate VCC =480V, IC =15A VGE =15V - 76 99 nC Internal emitter inductance measured 5mm (0.197 in.) from case LE PG-TO-220-3-1 PG-TO-247-3-21 nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC ≤ 600V, Tj ≤ 150 °C - 150 - A 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

3 Rev. 2.3 Sep 08 Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 32 38 Rise time tr - 23 28 Turn-off delay time td(off) - 234 281 Fall time tf - 46 55 ns Turn-on energy Eon - 0.30 0.36 Turn-off energy Eoff - 0.27 0.35 Total switching energy Ets Tj =25 °C, VCC =400V, IC =15A, VGE =0/15V, RG =21 Ω , Lσ 1) =180nH, Cσ 1) =250pF Energy losses include “tail” and diode reverse recovery. - 0.57 0.71 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 279 254 ns Diode reverse recovery charge Qrr - 390 - nC Diode peak reverse recovery current Irrm - 5.0 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =200V, I F =15A, di F /dt =200A/ µ s - 180 - A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 31 38 Rise time tr - 23 28 Turn-off delay time td(off) - 261 313 Fall time tf - 54 65 ns Turn-on energy Eon - 0.45 0.54 Turn-off energy Eoff - 0.41 0.53 Total switching energy Ets Tj =150 °C VCC =400V, IC =15A, VGE =0/15V, RG =21 Ω , Lσ 1) =180nH, Cσ 1) =250pF Energy losses include “tail” and diode reverse recovery. - 0.86 1.07 mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF 360 320 ns Diode reverse recovery charge Qrr - 1020 - nC Diode peak reverse recovery current Irrm - 7.5 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =150 °C VR =200V, I F =15A, di F /dt =200A/ µ s - 200 - A/µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

11 Rev. 2.3 Sep 08 PG-TO220-3-1

12 Rev. 2.3 Sep 08 5.44 0.55 6.04 5.49 1.68 3.68 4.17 20.82 16.25 15.70 1.05 3.50 19.80 13.10 MIN 1.90 4.90 2.27 1.07 1.85 1.90 0.238 0.216 0.066 0.145 0.164 0.075 0.820 0.640 0.618 0.022 0.193 0.089 0.042 0.073 0.041 0.075 0.138 0.780 0.516 0.68 6.30 6.00 17.65 2.60 5.10 14.15 3.70 21.10 16.03 20.31 1.35 4.47 2.41 5.16 2.53 1.33 2.11 MAX 2.16 0.027 0.214 0.248 0.236 0.695 0.557 0.102 0.201 0.831 0.631 0.053 0.146 0.799 0.176 MIN MAX 0.095 0.203 0.099 0.052 0.083 0.085 7.5mm 5 5 17-12-2007 Z8B00003327 2.87 2.87 0.113 0.113 3.38 3.13 0.133 0.123 M M PG-TO247-3

13 Rev. 2.3 Sep 08 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQ S Q F t S t F V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity Cσ =250pF. Published by Infineon Technologies AG,

14 Rev. 2.3 Sep 08 Published by Infineon Technologies AG

81726 Munich, Germany

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