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HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW15N120H3 1200Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-12-01 HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast recoveryanti-paralleldiode Features: TRENCHSTOPTMtechnologyoffering

  • verylowVCEsat
  • lowEMI
  • Verysoft,fastrecoveryanti-paralleldiode
  • maximumjunctiontemperature175°C
  • qualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • uninterruptiblepowersupplies
  • weldingconverters
  • converterswithhighswitchingfrequency G C E G C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IKW15N120H3 1200V 15A 2.05V 175°C K15H1203 PG-TO247-3

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-12-01 TableofContents

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-12-01 MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 60.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 15.0 7.5 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤600V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=175°C tSC µs PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 217.0 105.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance, junction - case Rth(j-c) 0.70 K/W Diode thermal resistance, junction - case Rth(j-c) 2.12 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-12-01 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=15.0A Tvj=25°C Tvj=125°C Tvj=175°C 2.05 2.50 2.70 2.40 V Diode forward voltage VF VGE=0V,IF=7.5A Tvj=25°C Tvj=175°C 1.80 1.85 2.35 V Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25°C Tvj=125°C Tvj=175°C 2.40 2.60 2.60 3.05 V Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25°C Tvj=175°C 250.0 2500.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA Transconductance gfs VCE=20V,IC=15.0A - 7.5 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 875 - Output capacitance Coes - 75 - Reverse transfer capacitance Cres - 45 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=960V,IC=15.0A, VGE=15V - 75.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE - 13.0 - nH Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s IC(SC) VGE=15.0V,VCC≤600V, tSC≤10µs Tvj=175°C - 52 - A

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-12-01 SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 21 - ns Rise time tr - 34 - ns Turn-off delay time td(off) - 260 - ns Fall time tf - 14 - ns Turn-on energy Eon - 1.10 - mJ Turn-off energy Eoff - 0.45 - mJ Total switching energy Ets - 1.55 - mJ Tvj=25°C, VCC=600V,IC=15.0A, VGE=0.0/15.0V, RG(on)=35.0Ω ,RG(off)=35.0Ω , Lσ=95nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 260 - ns Diode reverse recovery charge Qrr - 0.80 - µC Diode peak reverse recovery current Irrm - 7.7 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -110 - A/µs Tvj=25°C, VR=600V, IF=15.0A, diF/dt=500A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) - 19 - ns Rise time tr - 30 - ns Turn-off delay time td(off) - 327 - ns Fall time tf - 43 - ns Turn-on energy Eon - 1.60 - mJ Turn-off energy Eoff - 0.90 - mJ Total switching energy Ets - 2.50 - mJ Tvj=175°C, VCC=600V,IC=15.0A, VGE=0.0/15.0V, RG(on)=35.0Ω ,RG(off)=35.0Ω , Lσ=95nH,Cσ=67pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr - 470 - ns Diode reverse recovery charge Qrr - 1.70 - µC Diode peak reverse recovery current Irrm - 9.8 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -80 - A/µs Tvj=175°C, VR=600V, IF=15.0A, diF/dt=500A/µs

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-12-01 PG-TO247-3

Highspeedswitchingseriesthirdgeneration Rev.2.1,2014-12-01 t a a b b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% VGE 10% IC t 90% VGE vGE(t) t t IC(t) vCE(t) 90% VGE vGE(t) t t vCE(t) tt1 t4 2% IC 10% VGE 2% VCE t2 t3 E t t V I toff = x x d CE C E t t V I ton = x x d CE C CC dI /dtF dI I,V Figure A. Figure B. Figure C. Definition of diode switching characteristics Figure E. Dynamic test circuit Figure D. IC(t) Parasitic inductance L , parasitic capacitor L , relief capacitor C , (only for ZVT switching) s s r

High speed switching series third generation Rev. 2.1, 2014-12-01

Revision History

Revision: 2014-12-01, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2009-11-27 - 1.2 2010-02-10 - 2.1 2014-12-01 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

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© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.