2SK1221 FUJI | Alldatasheet
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2SK1221 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F Il Ss E R | ES MFeatures Outline Drawings @Hich speed switching ~ @ Low on-resistance we @No secondary breakdown O36 ot al we 5 yap tae @ Low driving power MN i. ig OTs) | @Hich voltage ryt gy) | = b @Vocs=+30V Guarantee Inbal ; He | || WAodplications owe tt Ie = 48 = ‘ 5: Saree Switching regulators | : e@uUPS 2sa| | 2se oa'ft|| at ©@DC-DC converters _. — © General purpose power amplifier JEDEC ___TO20AB EIAJ SC-46 Wax. Ratings and Characteristics Equivalent Circuit Schematic @Absolute Maximum Ratings(Tce=25'C) Items Symbols Ratings Units a Dr in-source voltage Voss 250 Vv Coatinuous drain current I 10 A Drain(p) —Puised drain current eA Co itinuous reverse drain current 10 A Gate-source peak voltage +30 Vv . Mi: x. power dissipation [Pr | 80 W Gate(s) Operating and storage 150 C source(s) ter perature range 55~+150] °C @Elestrical Characteristics(Te = 25°C) —_ Ttems Test Conditions [_Min. | Typ. | Max] Units Drain-source breakdown voltage Ip=1mA_Vos=0V [20 [| | OT UV Gite threshold voltage Ip=1mA_Vos=Ves 5.0 [| V 9 1 oo Vos =250V Tn=25C | | 10 | 500 vA Zeco gate voltage drain current | Inss Ves=0V T= 125°C ee ee mA Gite-source leakage current | loss Ves=+30V_Vos=0V_ | 10 | 100 | nA Drain-source on-state resistance | Rosin) Ip=5A__Vas=10V. _ - 0.4 a Fcrward transconductance | gic In=5A___Vos=25V 2] 45) Ss Input capacitance Vos=25V 570 | 860 —Ouitput capacitance Vos=0V [ [ao [210] pF Reverse transfer capacitance {_=IMHz SR Turn-on time ton = = (tn taan ti) Ves oo. (torn tte) t 8 ee ec Diode forward on-voltage Vsp W=2XToe -Vos=0V Ta=2ec [| T12[ 168) Reverse recovery time ter Iv=Ion di/dt=100A/us Tw=25C | | 140 [ ns @Thermal Characteristics Items Symbols Test Conditions Min. | Typ. | Max. | Units ; Rinen-ay | Channel to air es NN OA Trermal Resistance [Runenor | channel to case i ee OT A2-163
FUJI POWER MOS-FET 28K1221 ———— Eee Characteristics 20[Avnezov egy pivetiven 8 ees Ff aana sted rae vor t ove prt] ov ~~ COCOA Boge seeesneeeacy i igtertastestesrtorsarats Se ee ® pec HEE ee dee be a CCC eee | oe ee eee od Se Ane oo So eeseeeeeane COC ere 10 | eS (SER EOREREE SEES AGNURaEE Eo (OCC Hp sv Ros(on) 8 Ter eee » Ege SEREE EEE COMME ipcanses GeneeneGEneman, ® ser eet ere P Zaseeeeeeeaa eee oid ee i /SSRERRREEEEAEEEEEEEEEE er sy eee SSS oA CoC 50 ° Vos {v) Ton (0) Typical Output Characteristics Drain-Source on State Resistance vs. Tch CE TTT TTT Ty T rrr yyy eat, [ITTTiTTITITT TTT] ane s (arb are ae PH
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ET ed thins pone tes nie ate eee seeeeee) eeetaeeee PCa EE EERE eH so EEE EEE HH | {| Fey a ts KEE CECOCAC Co e EAE Reston) CII py oe | to E vu ™ FA | os HI soo eee Haye se . | Wake a yt Ee earferersepeea ped 5 m= FES SOSSREUSERESEEEOERER op FOOSE reer} oC OOOO} ° 5 0 ° 5 10 5 20 vos (Vv) w Typical Transfer Characteristic Typical Drain Source on State Resistance vs. lo COO FECES HH wore Lit TTT CO ee seseesaebeoerenaiees “EET wo Pry oe strdpasazesseatastats Arse 3.0 a a es CO ote ee @ eCOOe CREEL cr CCC M 20 POCO ELE Tr POUT CEELLEEPEEELE ELL | oH 6 oO 5 10 6 20 ° 50 wo 6O to (A) Teh (€) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Tch A2-164
28K1221 FUJI POWER MOS-FET ° eee 250 PIyyp yr * Srreeeiccecoern aes pee ee eee Fr) ts a LU ATT TT Ap vf AAA 5 LL faeNn= TTT He Age WSS ose CIA, ee ASA c 8 AAA {4 }-4-- OSCE wo AA P NPR ws Ceo NUTT He | CA a D) " Pe. TRE ++ | WO) go hfe ee2 oo Er] OSS SS a SSS ef bd. 0 OE 6 EEE REESE Pea oo a pt, {tt COE CCer eee o> SSS, ° 10 20 30 0 20 40 60 Vos (Vv) Qe (nc) Typical Capacitance vs. Vos Dynamic Input Characteristics 80. LT TT LITT AE — | ° feaomnem PTTL Cee ASEH nenneee so [PTT TTP ee a ae COCO N Cee CEE EE COCO Ne ETE wise ve i oH FEE LL al CACO NC » * ESS SSeS esssessssehcenwie (FREER RSS ee w FTN COCA COCO eo [TTT rrr HAA AA Ps LUT gL LL LTT ° 0.5 10 1S ° 50 10 150 Vso (Vv) Te (€) Forward Characteristics of Reverse Diode Power vs. Temperature Derating 108 FSS testy deco) Tease CHE a | | = AA i Ua ade ih eae SSRRTYS oT ooo or ENA with | UG omar eee 10) SS Be 00 ue Ht age . COO TNT TTT] an 10" Lot ST I i) ) NKR +! SSS Se Seti SL LENA SS ls es), Se Lit ee
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