K11908-010K

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Two InGaAs PIN PD with different spectral response are arranged one above the other to cover a broad wavelength range www.hamamatsu.com The K11908-010K incorporates an InGaAs PIN photodiode (cutoff wavelength: λc=1.7 μm) mounted over a long wavelength type InGaAs PIN photodiode (λc=2.55 μm), along the same optical axis. The spectral response covered from 0.9 μm to 2.55 μm as wide range and delivers low noise. Structure Absolute maximum ratings Parameter Symbol Condition Speci fi cation Unit Window material - Borosilicate glass - Package - 4-pin TO-5 - Parameter Symbol Condition Value Unit Reverse voltage VR max InGaAs (λc=1.7 μm), Ta=25 °C 2 VInGaAs (λc=2.55 μm), Ta=25 °C 1 Operating temperature Topr -40 to +70 °C Storage temperature Tstg -55 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. InGaAs (λc=1.7 μm) mounted over InGaAs (λc=2.55 μm) along the same optical axis Wide spectral response range: 0.9 to 2.55 μm Low noise, low dark current Spectroscopy Optical measurement equipment Radiation thermometer Features Applications

Tow-color detector K11908-010K Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response Peak sensitivity wavelength λp InGaAs (λc=1.7 μm) - 1.55 - μmInGaAs (λc=2.55 μm) - 2.1 - Dark current I D InGaAs (λc=1.7 μm), VR=1 V - 5 40 nA InGaAs (λc=2.55 μm), VR=0.5 V - 3 30 μA Cutoff frequency fc InGaAs (λc=1.7 μm), -3 dB VR=0 V, RL=50 Ω 12- MHzInGaAs (λc=2.55 μm), -3 dB VR=0 V, RL=50 Ω 26- Terminal capacitance Ct InGaAs (λc=1.7 μm), VR=0 V f=1 MHz - 1.5 2.5 nFInGaAs (λc=2.55 μm), VR=0 V f=1 MHz - 0.5 1 Shunt resistance Rsh InGaAs (λc=1.7 μm), VR=10 mV 11 0- M Ω InGaAs (λc=2.55 μm), VR=10 mV 2.8 14 - k Ω Detectivity D * InGaAs (λc=1.7 μm), λ=λp 1 × 10 5 × 10 - cmăHz1/2/WInGaAs (λc=2.55 μm), λ=λp 2 × 10 7 × 10 Spectral response Sensitivity temperature characteristic Wavelength (µm) Photosensitivity (A/W) 0.6 0.8 1.0 0.4 0.2 (Typ. Ta=25 °C) 1.2 0.9 InGaAs (λc=1.7 µm) InGaAs (λc=2.55 µm) KIRDB0479EA KIRDB0495EA (Typ. VR=0 V, Ta=15 to 65 °C) Sensitivity temperature coefficient (%/°C) Wavelength (µm) 0.5 -0.5 -1.5 -2.0 -1.0 1.0 1.5 2.0 InGaAs (λc=1.7 µm) InGaAs (λc=2.55 µm)

Tow-color detector K11908-010K Element temperature (°C) Shunt resistance -40 10 Ω 10 GΩ 100 Ω 1 kΩ 10 kΩ 100 kΩ 100 MΩ 1 GΩ 10 MΩ 1 MΩ -20 (Typ. VR=10 mV) 0 2 04 06 08 0 InGaAs (λc=2.55 µm) InGaAs (λc=1.7 µm) Terminal capacitance vs. reverse voltage 10 nF 0.001 0.1 0.01 1 10 Reverse voltage (V) Terminal capacitance 1 nF 10 pF 100 pF (Typ. Ta=25 °C, f=1 MHz) InGaAs (λc=1.7 µm) InGaAs (λc=2.55 µm) KIRDB0481EA KIRDB0482EA Shunt resistance vs. element temperature Dark current vs. reverse voltageLinearity 0.01 0.1 1 1 0 Reverse voltage (V) Dark current 1 mA 10 µA 100 µA 100 nA 100 pA 10 nA 1 nA 1 µA (Typ. Ta=25 °C) InGaAs (λc=1.7 µm) InGaAs (λc=2.55 µm) KIRDB0480EAKIRDB0496EA 02 6 1 0 1 2 1 6 Incident light level (mW) Relative sensitivity (%) 100 102 (Typ. Ta=25 °C, λ=1.3 µm, RL=2 Ω, VR=0 V) 48 1 4 InGaAs (λc=1.7 µm) InGaAs (λc=2.55 µm)

Cat. No. KIRD1116E01 May 2012 DN Tow-color detector K11908-010K www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of May, 2012. Dimensional outline (unit: mm) InGaAs (λc=1.7 µm) cathode InGaAs (λc=1.7 µm) anode InGaAs (λc=2.55 µm) cathode InGaAs (λc=2.55 µm) anode 0.43 lead Window 6.3 ± 0.1 30 min. 8.3 ± 0.2 3.1 ± 0.3 4.3 ± 0.3 6.5 ± 0.3 0.3 max. 9.1 ± 0.3 5.1 ± 0.2 InGaAs (λc=2.55 µm) InGaAs (λc=1.7 µm) KIRDA0218EA