K10T60

IKP10N60T INFINEON | Alldatasheet

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TrenchStop Series IKB10N60T Power Semiconductors 1 Rev. 2 Oct-04 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

• Very low V CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5 µs
• Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low V CE(sat)
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE I C VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code IKP10N60T 600V 10A 1.5V 175°C K10T60 TO-220 Q67040S4682 IKB10N60T 600V 10A 1.5V 175°C K10T60 TO-263 Q67040S4681 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 30 Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C - 30 Diode forward current, limited by Tjmax TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 30 A Gate-emitter voltage VGE ±20 V Short circuit withstand time1) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25°C Ptot 110 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 1) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E P-TO-263-3-2 (D²-PAK) (TO-263AB) P-TO-220-3-1 (TO-220AB)

TrenchStop Series IKB10N60T Power Semiconductors 2 Rev. 2 Oct-04 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC TO-220-3-1 1.35 Diode thermal resistance, junction – case RthJCD TO-220-3-1 1.9 Thermal resistance, junction – ambient RthJA TO-220-3-1 TO-263-3-2 Footprint TO-263-3-2 (6cm² Cu) K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =0.2mA 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =10A Tj =25 °C Tj =175 °C 1.5 1.8 2.05 Diode forward voltage VF VGE =0V, IF =10A Tj =25 °C Tj =175 °C 1.6 1.6 2.0 Gate-emitter threshold voltage VGE(th) IC =0.3mA, VCE =VGE 4.1 4.6 5.7 V Zero gate voltage collector current ICES VCE =600V , VGE =0V Tj =25 °C Tj =175 °C 1000 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =10A - 6 - S Integrated gate resistor RGint none Ω

TrenchStop Series IKB10N60T Power Semiconductors 3 Rev. 2 Oct-04 Dynamic Characteristic Input capacitance Ciss - 551 - Output capacitance Coss - 40 - Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz - 17 - pF Gate charge QGate VCC =480V, IC =10A VGE =15V - 62 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220-3-1 TO-263-3-2 - 7 - nH Short circuit collector current1) IC(SC) VGE =15V, tSC ≤ 5µ s VCC = 400V, Tj = 25 °C - 100 - A Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 12 - Rise time tr - 8 - Turn-off delay time td(off) - 215 - Fall time tf - 38 - ns Turn-on energy Eon - 0.16 - Turn-off energy Eoff - 0.27 - Total switching energy Ets Tj =25 °C, VCC =400V, IC =10A, VGE =0/15V, RG =23 Ω , Lσ 2) =60nH, Cσ 2) =40pF Energy losses include “tail” and diode reverse recovery. - 0.43 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 115 - ns Diode reverse recovery charge Qrr - 0.38 - µC Diode peak reverse recovery current Irrm - 10 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =25 °C, VR =400V, I F =10A, di F /dt =880A/ µ s - 680 - A/µs 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

TrenchStop Series IKB10N60T Power Semiconductors 4 Rev. 2 Oct-04 Switching Characteristic, Inductive Load, at Tj=175 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 10 - Rise time tr - 11 - Turn-off delay time td(off) - 233 - Fall time tf - 63 - ns Turn-on energy Eon - 0.26 - Turn-off energy Eoff - 0.35 - Total switching energy Ets Tj =175 °C, VCC =400V, IC =10A, VGE =0/15V, RG = 23 Ω Lσ 1) =60nH, Cσ 1) =40pF Energy losses include “tail” and diode reverse recovery. - 0.61 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 200 - ns Diode reverse recovery charge Qrr - 0.92 - µC Diode peak reverse recovery current Irrm - 13 - A Diode peak rate of fall of reverse recovery current during tb di rr /dt Tj =175 °C VR =400V, I F =10A, di F /dt =880A/ µ s - 390 - A/µs 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

TrenchStop Series IKB10N60T Power Semiconductors 12 Rev. 2 Oct-04 Dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358

TrenchStop Series IKB10N60T Power Semiconductors 13 Rev. 2 Oct-04 Figure A. Definition of switching times Figure B. Definition of switching losses I rrm 90% I rrm 10% I rrm di /dt F t rr I F i,v tQS QF tS tF V R di /dt rr Q= Q Q rr S F t= t trr S F + Figure C. Definition of diodes switching characteristics p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity Cσ =40pF.

TrenchStop Series IKB10N60T Power Semiconductors 14 Rev. 2 Oct-04 Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.