IKD10N60R_14 INFINEON | Alldatasheet

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IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD10N60R 600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications Datasheet IndustrialPowerControl

TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage Features: TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering

  • OptimisedVCEsatandVFforlowconductionlosses
  • SmoothswitchingperformanceleadingtolowEMIlevels
  • Verytightparameterdistribution
  • Operatingrangeof1to20kHz
  • Maximumjunctiontemperature175°C
  • Shortcircuitcapabilityof5µs
  • Bestinclasscurrentversuspackagesizeperformance
  • QualifiedaccordingtoJEDECfortargetapplications
  • Pb-freeleadplating;RoHScompliant(forPG-TO252:solder temperature260°C,MSL1)
  • CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications:
  • Consumermotordrives G C E G E C KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IKD10N60R 600V 10A 1.65V 175°C K10R60 PG-TO252-3

TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 TableofContents

TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 20.0 10.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 30.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 30.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 20.0 10.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 30.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC µs PowerdissipationTC=25°C Ptot 150.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic IGBT thermal resistance,1) junction - case Rth(j-c) 1.00 K/W Diode thermal resistance,2) junction - case Rth(j-c) 2.60 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.

TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=10.0A Tvj=25°C Tvj=175°C 1.65 1.85 2.10 V Diode forward voltage VF VGE=0V,IF=10.0A Tvj=25°C Tvj=175°C 1.70 1.70 2.10 V Gate-emitter threshold voltage VGE(th) IC=0.17mA,VCE=VGE 4.3 5.0 5.7 V Zero gate voltage collector current1) ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C 40.0 1000.0 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=10.0A - 6.1 - S Integrated gate resistor rG none Ω ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value min. typ. max. Parameter Symbol Conditions Unit DynamicCharacteristic Input capacitance Cies - 655 - Output capacitance Coes - 37 - Reverse transfer capacitance Cres - 22 - VCE=25V,VGE=0V,f=1MHz pF Gate charge QG VCC=480V,IC=10.0A, VGE=15V - 64.0 - nC Short circuit collector current Max. 1000 short circuits Time between short circuits: ≥ 1.0s IC(SC) VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - A SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) - 14 - ns Rise time tr - 10 - ns Turn-off delay time td(off) - 192 - ns Fall time tf - 139 - ns Turn-on energy Eon - 0.21 - mJ Turn-off energy Eoff - 0.38 - mJ Total switching energy Ets - 0.59 - mJ Tvj=25°C, VCC=400V,IC=10.0A, VGE=0.0/15.0V, rG=23.0Ω ,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E 1) Not subject to production test - verified by design/characterization

TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr - 62 - ns Diode reverse recovery charge Qrr - 0.56 - µC Diode peak reverse recovery current Irrm - 20.3 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -260 - A/µs Tvj=25°C, VR=400V, IF=10.0A, diF/dt=1000A/µs SwitchingCharacteristic,InductiveLoad Value min. typ. max. Parameter Symbol Conditions Unit IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) - 13 - ns Rise time tr - 11 - ns Turn-off delay time td(off) - 217 - ns Fall time tf - 211 - ns Turn-on energy Eon - 0.35 - mJ Turn-off energy Eoff - 0.58 - mJ Total switching energy Ets - 0.93 - mJ Tvj=175°C, VCC=400V,IC=10.0A, VGE=0.0/15.0V, rG=23.0Ω ,Lσ=60nH, Cσ=40pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr - 98 - ns Diode reverse recovery charge Qrr - 1.22 - µC Diode peak reverse recovery current Irrm - 20.5 - A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt - -259 - A/µs Tvj=175°C, VR=400V, IF=10.0A, diF/dt=1000A/µs

TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 PG-TO252 -3

TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 t a a b b td(off) tf trtd(on) 90% IC 10% IC 90% IC 10% IC t 90% VGE vGE(t) t t iC(t) vCE(t) 90% VGE vGE(t) t t iC(t) vCE(t) tt1 t4 2% IC 10% VGE 2% VCE t2 t3

TRENCHSTOPTMRC-Seriesforhardswitchingapplications Rev.2.5,2014-03-12 RevisionHistory IKD10N60R Revision:2014-03-12,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2010-01-12 - 2.1 2011-01-17 Release of final datasheet 2.2 2013-02-19 Change package 2.3 2013-12-10 New value ICES max limit at 175°C 2.4 2014-02-26 Without PB free logo 2.5 2014-03-12 Storage temp -55...+150°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered.