2SK1006-01MR FUJI | Alldatasheet
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2SK1006-01MR FUJI POWER MOS-FET rr N-SHANNEL SILICON POWER MOS-FET F I S E RI ES WM Outline Drawings MFeatures _ 0808 ay _4sa02 @tligh speed switching [ a [tenoe @ Low on-resistance = | 1 am @Nlo secondary breakdown |<] 3 7 al - @ Low driving power 8 gE @tligh voltage “| [az | @\\ css = +30V Guarantee ii l] sso2 @/valanche-proof \\2s02 if ~ jl ‘ome Applications i | | 3 Source @ witching regulators j fLozsez | 0% eLPS couse | 254102 im 22302 @['C-DC converters JEDEC —_ ®@Ceneral purpose power amplifier SC-67 M@ Viax. Ratings and Characteristics MEquivalent Circuit Schematic @/bsolute Maximum Ratings(Tc= 25°C) _ Items Symbols | Ratings | Units _ — ~_ Drain-source voltage [Voss | 450 «| OV ___sontinuous drain current | Ib | SYA ___ Pulsed drain current [now | A Drain(o) ___continuous reverse drain current| Ine 5 | A Wax power dissipation | Po [40 |W Gotels) Dperating and storage Ten 190 | "CO __ emperature range Tse -55~ +150) °C Source(S) @€lectrical Characteristics(Tc = 25°C) _ ~~ _ Items Symbols | ____Test Conditions | Min. | Typ. | Max. [ Units ____Drain-source breakdown voltage] Viorwss | Io=ImA_Vos=0V | Vv ___ Sate threshold voltage Vesom | lo=ImA__Vos=Vos | 25 [35 50 | V : Vos =450V Ten =25°C 10 | 500 uA Zero gate volte o Ten =25'C | |_wA Zero gate voltage drain current | Toss _lvesov | tasnse 02 1 [mA ___ Sate-source leakage current | Toss | Vos==30V_Vos=0V_ _ io | 100 | nA ___ xtain-source on-state resistance | Rosiom | In=25A Vos=10V | il | 16] 9 __ forward transconductance [gm (| :‘In=25A” Vos=25V_ _. 15 | 30 | s ___ nput capacitance [Cus Vs =25V |__| 500 | 750 ~~ 3utput capacitance | Cos | Ves=0V i | 70 _ |_00 pF ___ Reverse transfer capacitance | Cy | f =1MHz ee 30a Turn-on time ton tate = = || 10 Wb Purn-off time torr tein Ronn _|_ 80 | 120 ns aan ltugn tt) a — lode forward on-voltage | "Van [Te =2X Tox Ves=0V_ TH =25C [ | LO | 5 | OV Reverse recovery time te Tv=Iox_di/dt=100A/ps Ten = 25°C 300 ns @T ermal Characteristics _ Items. | Symbols [Test Conditions __—*|_‘Min. | Typ. | Max. | Units Thermal Resist: Rowen | channel toair | 62.5_| °C/W __ ermal Resistance Runen-er | channel to case 3.125 | °C/W A2-70
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FUJI POWER MOS-FET 2SK 1006-01MR ee i OS J 4 cetivea van, Sot oo SOP Pear evenl = 80s pine tet bf SEP Ea {It 5 h EER EHS cian | » Ssecs a — =a z 4S r a ia i on - mr a T] a | Ne LU ian eee ae Za Coo y (oF) 10" = BEess: SS! coe | | LL / EARS Seeeeaeas a . FS SSS = SSAA] = = = PPeTTes (os Hy A | MAMHLLATOQATRTGRI 6 FEES EERE - i. OI 9 © 20 w» 40 0 05 oO it} Vos (V¥} Vso (V) Typical Capacitance vs. Vos Forward Characteristics of Reverse Diode 50 : maa Eta O=00%, Tenz se] | Unt.tan pte LT t2cke oR ||| i || | pete | fe EES Coa Ge ve Stee Ss jl JEN Sabi eaennl mND De PNET LI aan SER SON = CTS HAN AR 20} -+—-—-t- Ne Seee a et Po . SS EAS St be A Fo SSE SH Ff - ww He oS ed AN He ony POH | TN TE | ns a ° “ Be ° 50 0 160 ra red 0 Te (t) Vos WW) Power vs. Temperature Derating Safe Operating Area oT oro = ee Piangygimnnn= == tli ie ae ey Se at 3 ihe Eee or at sai PEt Ste i rit] Hi ni Rth ==> Ses! samcee washer neti tH (c/w) co “s anni ot LUT TIE TTT {TH o o o o ca Transient Thermal Impedance A2-72
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