J111 MICRO-ELECTRONICS | Alldatasheet
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jaf J114. J412- 113 . i “LL N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS | J1l1, J112, Jl13 are N-channel silicon . TO-92 junction field effect transistors . designed for analog switching, choppers and commutators applications. h DSG ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage VGS ~35V Gate Current Ic 50mA Total Power Dissipation (TA=25°C) Ptot 350mW Power Derating (to 125°C) 3. 5mW/OC Operating Junction & Storage Temperature Tj, Tstg -55 to +125°C ELECTRICAL CHARACTERISTICS (T,=25°C) PARAMETER SYMBOL MIN TYP MAX |UNIT| TEST CONDITIONS » \\|Gate-Source Breakdown Voltage BVGss -35 Vv IG=-lpA = Vps=0 Gate Reverse Current (note 1) Icss -1 | nA Vos=-15V Vps=0 Drain Saturation Current Jl1lll] Ipss * 20 mA Vps=15V = Vgs=0 J112 5 mA VpS=15V -VGS=0 J113 2 mA YDs=15V _ VGs=0 Drain Cutoff Current (note 1) Ip(off) -1 nA Vps=5V VGs=lOV Gate-Source Pinchoff Voltage Vp J1LL -3 -l0 | v Ip=luA —-Vps=5V J112 -1 -5 } Vv Ib=luA — Vps=5V J113 ~0.5 3 1 Tp=lyA ——- Vps=5V Drain-Source On Resistance J1l1} *DS(on) 30 Q Vgs=-10V Vps¢0.1VI J112) 50 | 9 V¢s=-10V Vps<0.1V} J113 100 Q V6s=-l10V Vps<9.1V Turn On Delay Time td(on) 7 ns Rise Time tr . 6 ns Turn Off Delay Time td(off) 2 ns] |
4 Fall Time tr 15 ns|
z note 1 : Approximately doubles for every 10°C increase in TA.- e * Pulse Test : Pulse Width = 0.3ms, Duty Cycle = 1% oO 38 HUNG TO ROAD, KWUN TONG, Hons Kons. TELEX 433510 MICRO ELECTRONICS LTD. ‘10x tons r. 0. soxtot77 caste appress “MicRoTto FAX: 3410391 See