IPTG111N20NM3FD INFINEON | Alldatasheet

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Technical content

Features

  • N-channel,normallevel
  • Verylowon-resistanceRDS(on)
  • Fastdiode(FD)withreducedQrr
  • 175°Coperatingtemperature
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21
  • Optimizedforhardcommutationruggedness Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 11.1 mΩ ID 108 A Qoss 162 nC QG 65 nC Type/OrderingCode Package Marking RelatedLinks IPTG111N20NM3FD PG-HSOG-8-1 111N20NF -

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet TableofContents

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 108 10.8 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RTHJA=40°C/W2) Pulsed drain current3) ID,pulse - - 432 A TA=25°C Avalanche energy, single pulse4) EAS - - 375 mJ ID=67A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 375

3.8 W TC=25°C

TA=25°C,RTHJA=40°C/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.4 K/W - Thermal resistance, junction - ambient, 6 cm² cooling area RthJA - - 40 K/W - Thermal resistance, junction - ambient, minimal footprint2) RthJA - - 62 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 200 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=267µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=160V,VGS=0V,Tj=25°C VDS=160V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 9.0 11.1 mΩ VGS=10V,ID=96A Gate resistance1) RG - 2.8 4.2 Ω - Transconductance gfs 82 160 - S |VDS|≥2|ID|RDS(on)max,ID=96A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 5300 7000 pF VGS=0V,VDS=100V,f=1MHz Output capacitance1) Coss - 400 520 pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance1) Crss - 6 11 pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 13 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Rise time tr - 11 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Turn-off delay time td(off) - 39 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Fall time tf - 13 - ns VDD=100V,VGS=10V,ID=48A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 25 - nC VDD=100V,ID=96A,VGS=0to10V Gate charge at threshold Qg(th) - 16 - nC VDD=100V,ID=96A,VGS=0to10V Gate to drain charge1) Qgd - 8.2 12.3 nC VDD=100V,ID=96A,VGS=0to10V Switching charge Qsw - 17.4 - nC VDD=100V,ID=96A,VGS=0to10V Gate charge total1) Qg - 65 81 nC VDD=100V,ID=96A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=100V,ID=96A,VGS=0to10V Output charge1) Qoss - 162 215 nC VDS=100V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 108 A TC=25°C Diode pulse current IS,pulse - - 432 A TC=25°C Diode forward voltage VSD - 0.95 1.2 V VGS=0V,IF=96A,Tj=25°C Reverse recovery time1) trr - 125 250 ns VR=100V,IF=96A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 309 - nC VR=100V,IF=96A,diF/dt=100A/µs 1) Defined by design. Not subject to production test.

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 100 150 200 250 300 350 400 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 100 120 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 300 350 10 V 8 V 7 V 6 V 5 V 4.5 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 120 160 200 240 4.5 V 5 V 6 V 7 V 8 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 150 200 250 300 350 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 175 °C 25 °C RDS(on)=f(VGS),ID=96A;parameter:Tj

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 RDS(on)=f(Tj),ID=96A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -80 -40 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2670 µA 267 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 125 150 175 200 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 100 101 102 103 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 10-1 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 40 V 100 V 160 V VGS=f(Qgate),ID=96Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -80 -40 120 160 200 186 191 196 201 206 211 216 221 226 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet 5PackageOutlines DIMENSIONSMIN.MAX.bDcEeL AA1 1.20 MILLIMETERS2.200.002.400.10 PG-HSOG-8-U01REVISION: 01DATE: 08.02.2021PACKAGE - GROUPNUMBER: E18.458.75e18.40 Figure1OutlinePG-HSOG-8-1,dimensionsinmm

OptiMOSTM3Power-Transistor,200V IPTG111N20NM3FD Rev.2.0,2021-02-11Final Data Sheet RevisionHistory IPTG111N20NM3FD Revision:2021-02-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-02-11 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.