IPT4006-XXH IPS | Alldatasheet
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IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT4006-50H is suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT4006-50H series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads. The IPT4006-50H (Insulated version) series are isolated internally they provides a 2500V RMS isolation voltage from all three terminals to external heatsink. MAIN FEATURES ABSOLUTE MAXIMUM RATINGS Symbol Value Unit IT(RMS) 40 A VDRM / VRRM 600 V VTM ≤ 1.55 V Parameter Symbol Value Unit Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage VDSM VRSM 700 700 V RMS on–state current Tc = 100℃ (360º conduction angle ) IT(RMS) 40 A Non repetitive surge peak on–state Current t = 8.3ms (full cycle, Tj = 25℃) t = 10ms ITSM 420 400 A I² t Value for fusing tp = 10ms I²t 880 A²s Critical Rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ dI / dt 50 A/us Peak gate current tp = 20us, Tj = 125 ℃ IGM 8 A Average gate power dissipation Tj = 125 ℃ PG(AV) 1 W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com TO3P IPT4006-xxH
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) STATIC CHARACTERISTICS THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j – c) Junction to case (AC) 1.2 ℃/W Symbol Test Condition Quadrant IPT4006-xx0H Unit IGT VD = 12V RL = 33Ω Tj = 25 ℃ I – II – III MAX 50 mA VGT I – II – III MAX 1.3 V VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ I – II – III MIN 0.2 V IL IG = 1.2 IGT, Tj = 125 ℃ I – III MAX mA II 160 IH IT = 500mA Gate open MAX 80 mA dV/dt VD = 67% VDRM gate open Tj = 125 ℃ MIN 1000 V/us (dI/dt)c (dV/dt) c=0.1V/us Tj = 125 ℃ MIN A/ms(dV/dt) c=10V/us Tj = 125 ℃ - Without snubber Tj = 125 ℃ - Symbol Test Conditions Value (MAX) Unit VTM ITM = 28A, t p = 380uS Tj = 25 ℃ 1.55 V IDRM VD = VDRM Tj = 25 ℃ 20 uA IRRM VR = VRRM Tj = 125 ℃ 5 mA 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPT4006-xxH
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com PACKAGE MECHANICAL DATA TO3P Millimeters Min Typ Max A 4.4 4.6 B 1.45 1.55 C 14.35 15.6 D 0.5 0.7 E 2.7 2.9 F 15.8 16.5 G 20.4 21.1 H 15.1 15.5 J 5.45 5.65 K 3.15 3.65 L 4.07 4.17 M 1.35 1.40 N 14.6 IPT4006-xxH
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPT4006-50H IPT4006-xxH