IPT08Q06-CED IPS | Alldatasheet
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IP Semiconductor Co., Ltd. IPT08Q06-xxD High current density due to double mesa technology; SIPOS and Glass Passivation. IPT08Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. MAIN FEATURES ABSOLUTE MAXIMUM RATINGS Symbol Value Unit IT(RMS) 8 A VDRM / VRRM 600 V VTM ≤ 1.55 V Parameter Symbol Value Unit Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage VDSM VRSM 700 700 V RMS on–state current Tc =95℃ (Full sine wave) IT(RMS) 8 A Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms (full cycle, Tj = 25℃) f = 50 Hz t = 20ms ITSM 84 A I² t Value for fusing tp = 10ms I²t 36 A²s Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ dI / dt 50 A/us Peak gate current tp = 20us, Tj = 125 ℃ IGM 4 A Average gate power dissipation Tj = 125 ℃ PG(AV) 1 W 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com DPAK(TO-252)
ELECTRICAL CHARACTERISTICS(Tj = 25 ℃ unless otherwise specified) STATIC CHARACTERISTICS THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j – c) Junction to case (AC) 1.6 ℃/W Symbol Test Conditions Value(MAX) Unit VTM ITM = 17A, t p = 380uS Tj = 125 ℃ 1.55 V IDRM VD = VDRM Tj = 125 ℃ 5 uA IRRM VR = VRRM Tj = 125 ℃ 1 mA 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com Symbol Test Condition Quadrant IPT08Q06-xxD Unit CE BE IGT VD = 12V RL = 30Ω I – II – III IV MAX 25 100 mA VGT ALL MAX 1.3 V VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ ALL MIN 0.2 V IL IG = 1.2 IGT I – III – IV MAX 40 50 mA II 80 100 IH IT = 100mA MAX 25 50 mA dV/dt VD = 67% VDRM gate open Tj = 125 ℃ MIN 200 400 V/us IPT08Q06-xxD
TO-252(DPAK) 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPT08Q06-xxD
A 2.2 2.4 0.086 0.095 A2 0.03 0.23 0.001 0.009 B 0.55 0.65 0.021 0.026 B2 5.1 5.4 0.200 0.212 C 0.45 0.62 0.017 0.024 C2 0.48 0.62 0.019 0.024 D 6 6.2 0.236 0.244 E 6.4 6.7 0.252 0.264 G 4.40 4.70 0.173 0.185 H 9.35 10.1 0.368 0.397 L1 0.8 0.031 L2 1.37 1.5 0.054 0.059 V1 4º 4º V1 0º 8º 0º 8º 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPT08Q06-xxD
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPT08Q06-xxD IPT08Q06-xxD