IPT0406-18F IPS | Alldatasheet
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IP Semiconductor Co., Ltd. IPT0406-xxF High current density due to double mesa technology; SIPOS and Glass Passivation. IPT0406-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT0406-xx series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. The TO-220F isolated mounting base, they provides 1500V RMS isolation voltage. Symbol Value Unit IT(RMS) 4 A VDRM / VRRM 600 V IGT ≤ 50 mA MAIN FEATURES Parameter Symbol Value Unit Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage VDSM VRSM 700 700 V RMS on–state current Tc =105℃ (Full sine wave) IT(RMS) 4 A Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms (full cycle, Tj = 25℃) f = 50 Hz t = 20ms ITSM 30 A I² t Value for fusing tp = 10ms I²t 4.5 A²s Peak gate current tp = 20us, Tj = 125 ℃ IGM 1 A Peake gate power dissipation Tj = 125 ℃ PGM 1.5 W Average gate power dissipation Tj = 125 ℃ PG(AV) 0.1 W ABSOLUTE MAXIMUM RATINGS TO-220F 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) Symbol Test Condition Quadrant Rating Unit MIN TYP MAX IGT VD = 12V RL = 30Ω T2+G+/T2+G-/T2-G- 18 - 25 50 mA VGT T2+G+/T2+G-/T2-G- 1.5 V VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ 0.2 V IL IG = 1.2 IGT T2+ G+ 60 mAT2+ G- 70 T2- G- 60 IH IT = 100mA T2+G+/T2+G-/T2-G- 50 mA dV/dt VD = 67% VDRM gate open Tj = 125 ℃ 500 V/us STATIC CHARACTERISTICS Symbol Test Conditions Value (MAX) Unit IDRM VD = VDRM Tj = 25 ℃ 10 uA IRRM VR = VRRM Tj = 125 ℃ 1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j – c) Junction to case (AC) 3.5 ℃/W IPT0406-xxF 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-11 - 237 - 2837, Fax : +82-2-6280-6382, shorn@ipsemiconductor.com PACKAGE MECHANICAL DATA TO-220F Ref Dimensions Millimeters Inches Min Typ Max Min Typ Max A 4.4 4.8 0.173 0.189 C 0.5 0.75 0.020 0.030 C2 2.4 2.7 0.094 0.106 C3 2.6 3 0.102 0.118 D 8.8 9.3 0.346 0.367 E 9.7 10.3 0.382 0.406 F 6.4 6.8 0.252 0.268 G 5 5.2 0.197 0.205 H 28.0 29.8 11.0 11.7 L1 3.63 0.143 L2 1.14 1.7 0.044 0.067 L3 3.3 0.130 V1 40º 40º IPT0406-xxF
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com