IPT04Q06-TEI IPS | Alldatasheet
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IP Semiconductor Co., Ltd. IPT04Q06-xxI High current density due to double mesa technology; SIPOS and Glass Passivation. IPT04Q06-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. Symbol Value Unit IT(RMS) 4 A VDRM / VRRM 600 V IGT 5 to 25 mA MAIN FEATURES Parameter Symbol Value Unit Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage VDSM VRSM 700 700 V RMS on–state current Tc =105℃ (Full sine wave) IT(RMS) 4 A Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms (full cycle, Tj = 25℃) f = 50 Hz t = 20ms ITSM 35 A I² t Value for fusing tp = 10ms I²t 6 A²s Critical Rate of rise of on-state current IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃ dI / dt 50 A/us Peak gate current tp = 20us, Tj = 125 ℃ IGM 4 A Average gate power dissipation Tj = 125 ℃ PG(AV) 1 W ABSOLUTE MAXIMUM RATINGS IPAK(TO-251) 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) STATIC CHARACTERISTICS Symbol Test Conditions Value (MAX) Unit VTM ITM = 5.5A, t p = 380uS Tj = 25 ℃ 1.6 V IDRM VD = VDRM Tj = 25 ℃ 5 uA IRRM VR = VRRM Tj = 125 ℃ 1 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j – c) Junction to case (AC) 2.6 ℃/W Symbol Test Condition Quadrant IPT04Q06-xxI Unit TE DE SE AE IGT VD = 12V RL = 30Ω I – II – III IV MAX 5 25 mA VGT ALL MAX 1.5 V VGD VD=VDRM, RL=3.3KΩ, Tj = 125 ℃ ALL MIN 0.2 V IL IG = 1.2 IGT I – III – IV MAX 10 10 20 20 mA II 20 20 40 40 IH IT = 500mA MAX 15 15 25 25 mA dV/dt VD = 67% VDRM gate open Tj = 125 ℃ MIN 10 10 10 10 V/us (dV/dt)c (dV/dt) c=0.8A/ms Tj = 125 ℃ MIN 1 1 5 5 V/us IPT04Q06-xxI 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
TO-251(IPAK) Ref Dimensions Millimeters Inches Min Typ Max Min Typ Max A 2.2 2.4 0.086 0.095 A2 0.9 1.1 0.035 0.043 B 0.55 0.65 0.021 0.026 B2 5.1 5.4 0.200 0.212 B3 0.76 0.85 0.030 0.033 B4 0.32 0.013 C 0.45 0.62 0.017 0.024 C2 0.48 0.62 0.019 0.024 D 6 6.2 0.236 0.244 E 6.4 6.7 0.252 0.264 G 4.4 4.7 0.173 0.185 H 16 16.7 0.630 0.658 L 8.9 9.4 0.35 0.37 L1 1.8 1.9 0.071 0.075 L2 1.37 1.5 0.054 0.059 V1 4º 4º 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPT04Q06-xxI
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com