IPS612-05B IPS | Alldatasheet
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Technical content
IPS612 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. IPS612 series are suitable for general purpose applications, a high gate sensitivity is required. 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com Symbol Value Unit IT(RMS) 12 A IT(AV) 8 A VDRM / VRRM 600 V VTM ≤ 1.6 V MAIN FEATURES Parameter Symbol Value Unit RMS on–state current (Tc = 105℃, 180ºconduction half sine wave) IT(RMS) 12 A Average on–state current (Tc = 105℃, 180ºconduction half sine wave) IT(AV) 8 A Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +110 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage Tj = 25℃ VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage Tj = 25℃ VDSM VRSM 700 700 V One cycle Non Repetitive surge current ( Half Cycle, 50Hz) ITSM 140 A I² t Value for fusing (tp = 10ms, Half Cycle) I²t 98 A²s Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) dI/dt 50 A/us Peak gate current tp = 20us, Tj = 125℃ IGM 4 A Average gate power dissipation Tj = 125℃ PG(AV) 1 W ABSOLUTE MAXIMUM RATINGS TO-220B IP Semiconductor Co., Ltd.
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) Symbol Test Condition IPS612-xxB Unit 05 15 IGT Required DC gate current to trigger MAX 5 15 mA VGT Required DC voltage to trigger (anode supply = 6V, resistive load) MAX 1.3 V VGD DC gate voltage not to trigger (Tj = 110℃, VDRM = rated value) MAX 0.2 V IL IG = 1.2 IGT MAX 30 60 mA IH Holding current MAX 15 30 mA dV/dt VD = 67% VDRM gate open Tj = 125 ℃ MIN 40 200 V/us THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j – c) Junction to case TO-220B 2.8 ℃/W Symbol Test Conditions Value (MAX) Unit VTM ITM = 24A, tp = 380uS Tj = 25℃ 1.6 V IDRM / IRRM VD = VDRM Tj = 25℃ 5 uA VR = VRRM Tj = 125℃ 2 mA STATIC CHARACTERISTICS 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS612-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com PACKAGE MECHANICAL DATA TO-220B Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5.4 H 28 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º IPS612-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS612-xxB