IPS1225-40A IPS | Alldatasheet
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IPS61225 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa echnology; SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. Typical applications are in rectification (softstart) and these products are designed to be used with international recetifier input diodes, switches and output recetifiers which are available in identical package outlines. Symbol Value Unit IT(RMS) 25 A VDRM / VRRM 1200 V VTM ≤ 1.6 V MAIN FEATURES Parameter Symbol Value Unit RMS on–state current (Tc = 110℃, 180ºconduction half sine wave) IT(RMS) 25 A Average on–state current (Tc = 110℃, 180ºconduction half sine wave) IT(AV) 16 A Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage Tj = 25℃ VDRM VRRM 1200 1200 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage Tj = 25℃ VDSM VRSM 1300 1300 V One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM applied ITSM 250 A One cycle Non Repetitive surge current, 10ms sine pulse, no voltage applied 260 I² t Value for fusing, 10ms sine pulse, rated VRRM applied I²t 310 A²s I² t Value for fusing, 10ms sine pulse, no voltage applied 320 Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) dI/dt 100 A/us Peak gate current tp = 20us, Tj = 125℃ IGM 4 A Average gate power dissipation Tj = 125℃ PG(AV) 1 W ABSOLUTE MAXIMUM RATINGS TO-220A IP Semiconductor Co., Ltd. 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) Symbol Test Condition IPS1225-xxA Unit IGT Required DC gate current to trigger at 25℃ at - 40℃ at 125℃ MAX 100 mA VGT Required DC voltage to trigger at 25℃ (anode supply = 6V, resistive load) at - 40℃ at 125℃ MAX 1.5 2.5 1.0 V VGD DC gate voltage not to trigger (Tj = 125℃, VDRM = rated value) MAX 0.2 V IL IG = 1.2 IGT MAX 80 mA IH Holding current MAX 60 mA dV/dt VD = 67% VDRM gate open Tj = 125 ℃ MIN 500 V/us THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j – c) Junction to case for DC TO-220A 1.9 ℃/W Symbol Test Conditions Value (MAX) Unit VTM ITM = 50A, tp = 380uS Tj = 25℃ 1.6 V IDRM / IRRM VD = VDRM Tj = 25℃ 10 uA VR = VRRM Tj = 125℃ 4 mA STATIC CHARACTERISTICS IPS1225-xxA 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com PACKAGE MECHANICAL DATA TO-220A Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5.4 H 28 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º IPS1225-xxA
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com