IPP50R500C_15 INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 500VCoolMOS™CEPowerTransistor IPx50R500CE DataSheet Rev.2.1 Final PowerManagement&Multimarket

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet tab TO-220 Drain Pin 2 Gate Pin 1 Source Pin 3 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler.

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,LCD&PDPTVandLighting. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.5 Ω Qg.typ 18.7 nC ID,pulse 24 A Eoss@400V 2.02 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks IPP50R500CE PG-TO 220 5R500CE see Appendix A

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet TableofContents

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 7.6

4.8 A TC = 25°C

TC = 100°C Pulsed drain current2) ID,pulse - - 24 A TC=25°C Avalanche energy, single pulse EAS - - 129 mJ ID =2.9A; VDD = 50V Avalanche energy, repetitive EAR - - 0.20 mJ ID =2.9A; VDD = 50V Avalanche current, repetitive IAR - - 2.9 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30

30 V static;

AC (f>1 Hz) Power dissipation (non FullPAK) TO-220 Ptot - - 57 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Mounting torque (non FullPAK) TO-220 - - - 60 Ncm M3 and M3.5 screws Continuous diode forward current IS - - 6.6 A TC=25°C Diode pulse current2) IS,pulse - - 24.0 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs Maximum diode commutation speed3) dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs 3Thermalcharacteristics Table3Thermalcharacteristics(nonFullPAK)TO-220 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2.19 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.2mA Zero gate voltage drain current IDSS - µA VDS=500V,VGS=0V,Tj=25°C VDS=500V,VGS=0V,Tj=150°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.45 1.18 0.50 - Ω VGS=13V,ID=2.3A,Tj=25°C VGS=13V,ID=2.3A,Tj=150°C Gate resistance RG - 3 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 433 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 31 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 25 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 100 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 6 - ns VDD=400V,VGS=13V,ID=2.9A, RG=3.4Ω Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=2.9A, RG=3.4Ω Turn-off delay time td(off) - 30 - ns VDD=400V,VGS=13V,ID=2.9A, RG=3.4Ω Fall time tf - 12 - ns VDD=400V,VGS=13V,ID=2.9A, RG=3.4Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.3 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate to drain charge Qgd - 10 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate charge total Qg - 18.7 - nC VDD=400V,ID=2.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=2.9A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.85 - V VGS=0V,IF=2.9A,Tf=25°C Reverse recovery time trr - 180 - ns VR=400V,IF=2.9A,diF/dt=100A/µs Reverse recovery charge Qrr - 1.2 - µC VR=400V,IF=2.9A,diF/dt=100A/µs Peak reverse recovery current Irrm - 12 - A VR=400V,IF=2.9A,diF/dt=100A/µs

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet 5Electricalcharacteristicsdiagrams Powerdissipation(NonFullPAK) TC[°C] Ptot[W] 120 160 Ptot=f(TC) Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea(NonFullPAK)Tj=25°C VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Safeoperatingarea(NonFullPAK)Tj=80°C VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet Typ.outputcharacteristicsTj=25°C VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Typ.outputcharacteristicsTj=125°C VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.80 1.00 1.20 1.40 1.60 1.80 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -60 -40 -20 100 120 140 160 180 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 98% typ RDS(on)=f(Tj);ID=2.3A;VGS=13V

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Typ.gatecharge Qgate[nC] VGS[V] 400 V 120 V VGS=f(Qgate);ID=2.9Apulsed;parameter:VDD Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 175 100 120 140 EAS=f(Tj);ID=2.9A;VDD=50V Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 440 460 480 500 520 540 560 580 VBR(DSS)=f(Tj);ID=1mA

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Eoss=f(VDS) Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.4 0.6 0.8 1.0 1.2 1.4 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet 7PackageOutlines Figure1OutlinePG-TO220,dimensionsinmm/inches

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet 8AppendixA Table11RelatedLinks

  • IFXCoolMOSWebpage:www.infineon.com
  • IFXDesigntools:www.infineon.com

500VCoolMOS™CEPowerTransistor IPP50R500CE Rev.2.1,2014-06-06Final Data Sheet RevisionHistory IPP50R500CE Revision:2014-06-06,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-06-29 Release of final version 2.1 2014-06-06 Removal of TO-220FP WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.