IPB120N06NG INFINEON | Alldatasheet
Document overview
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Technical content
Features
- For fast switching converters and sync. rectification
- N-channel enhancement - normal level
- 175 °C operating temperature
- Avalanche rated
- Pb-free lead plating, RoHS compliant Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C 75 A T C=100 °C 53 Pulsed drain current I D,pulse T C=25 °C1) 300 Avalanche energy, single pulse E AS I D=75 A, R GS=25 Ω 280 mJ Reverse diode dv /dt dv /dt I D=75 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 158 W Operating and storage temperature T j, T stg -55 ... 175 °C IEC climatic category; DIN IEC 68-1 55/175/56 Value 1) See figure 3 V DS 60 V R DS(on),max SMDversion 11.7 mΩ I D 75 A Product Summary Type IPP120N06N G IPB120N06N G Marking 120N06N 120N06N Rev. 1.11 page 1 2006-07-05
Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 0.95 K/W SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) -- 4 0 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=94 µA 1.2 3 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=60 V, V GS=0 V, T j=125 °C - 1 100 Gate-source leakage current I GSS V GS=20 V, V DS=60 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=75 A - 9.9 12 mΩ V GS=10 V, I D=75 A, SMD version - 9.6 11.7 Gate resistance R G -2- Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=75 A 36 72 - S 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values Rev. 1.11 page 2 2006-07-05
Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1600 2100 pF Output capacitance C oss - 460 610 Reverse transfer capacitance C rss - 120 180 Turn-on delay time t d(on) -1 4 2 0 n s Rise time t r -2 7 4 0 Turn-off delay time t d(off) -3 4 5 0 Fall time t f -2 6 3 9 Gate Charge Characteristics3) Gate to source charge Q gs - 9 12 nC Gate charge at threshold Q g(th) -56 Gate to drain charge Q gd -2 1 3 2 Switching charge Q sw -2 6 3 8 Gate charge total Q g -4 6 6 2 Gate plateau voltage V plateau - 5.8 - V Output charge Q oss V DD=30 V, V GS=10 V -3 0 4 0 Reverse Diode Diode continous forward current I S - - 75 A Diode pulse current I S,pulse - - 300 Diode forward voltage V SD V GS=0 V, I F=75 A, T j=25 °C - 1 1.3 V Reverse recovery time t rr -4 5 6 0 n s Reverse recovery charge Q rr -6 4 8 0 n C 3) See figure 16 for gate charge parameter definition V R=30 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=75 A, R G=6.2 Ω V DD=30 V, I D=75 A, V GS=0 to 10 V Rev. 1.11 page 3 2006-07-05
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 10210110010-1 103 102 101 100 10-1 V DS [V] I D [A] limited by on-state resistance single pulse0.01 0.02 0.05 0.1 0.2 0.5 10010-110-210-310-410-5 100 10-1 10-2 t p [s] Z thJC [K/W] 100 120 140 160 180 0 50 100 150 200 T C [°C] P tot [W] 0 50 100 150 200 T C [°C] I D [A] Rev. 1.11 page 4 2006-07-05
5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 5.5 V 6.5 V 5 V 7 V 10 V 20 V 0 2 04 06 08 0 I D [A] R DS(on) [mΩ ] 25 °C175 °C 100 120 140 160 01234567 V GS [V] I D [A] 0 2 04 06 08 0 I D [A] g fs [S] 5.5 V 6 V 6.5 V 7 V 10 V 20 V 100 120 140 160 180 200 220 240 012345 V DS [V] I D [A] Rev. 1.11 page 5 2006-07-05
9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=75 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % -60 -20 20 60 100 140 180 T j [°C] R DS(on) [mΩ ] 94 µA 940 µA 0.5 1.5 2.5 3.5 -60 -20 20 60 100 140 180 T j [°C] V GS(th) [V] 25 °C 175 °C 25°C 98% 175°C 98% 103 102 101 100 10-1 0 0.5 1 1.5 2 V SD [V] I F [A] Ciss Coss Crss 104 103 102 101 0 1 02 03 04 05 0 V DS [V] C [pF] Rev. 1.11 page 6 2006-07-05
13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=75 A pulsed parameter: T j(start) parameter: V DD
15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA -60 -20 20 60 100 140 180 T j [°C] V BR(DSS) [V] V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 25 °C 100 °C 150 °C 103102101100 102 101 100 t AV [µs] I AV [A] 12 V 30 V 48 V 0 1 02 03 04 05 0 Q gate [nC] V GS [V] Rev. 1.11 page 7 2006-07-05
PG-TO-263 (D²-Pak) Rev. 1.11 page 8 2006-07-05
PG-TO220-3: Outline Rev. 1.11 page 9 2006-07-05
81726 München, Germany
© Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.11 page 10 2006-07-05