IPD65R660CFDA INFINEON | Alldatasheet
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MetalOxideSemiconductorFieldEffectTransistor CFDAAutomotive 650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA DataSheet Rev.2.1 Final Automotive
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet tab DPAK Drain Pin 2 Gate Pin 1 Source Pin 3 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseries combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Theresultingdevicesprovideallbenefitsofafast switchingSJMOSFETwhileofferinganextremelyfastandrobustbody diode.Thiscombinationofextremelylowswitching,commutationand conductionlossestogetherwithhighestrobustnessmakeespecially resonantswitchingapplicationsmorereliable,moreefficient,lighter,and cooler.
Features
- Ultra-fastbodydiode
- Veryhighcommutationruggedness
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Easytouse/drive
- QualifiedaccordingtoAECQ101
- Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformold compound
Applications
650VCoolMOS™CFDAisdesignedforswitchingapplications. Table1KeyPerformanceParameters Parameter Value Unit VDS 650 V RDS(on),max 0.66 Ω Qg,typ 20 nC ID,pulse 17 A Eoss @ 400V 1.8 µJ Body diode di/dt 900 A/µs Qrr 0.2 µC trr 65 ns Irrm 4.5 A Type/OrderingCode Package Marking RelatedLinks IPD65R660CFDA PG-TO 252 65F660A -
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet TableofContents
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 6 A TC=25°C
3.8 TC=100°C
Pulsed drain current2) ID‚pulse 17 A TC=25°C Avalanche energy, single pulse EAS 115 mJ ID=1.2A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.21 mJ ID=1.2A,VDD=50V Avalanche current, repetitive IAR 1.2 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V Gate source voltage VGS -20 20 V static -30 30 AC (f > 1 Hz) Power dissipation (SMD) DPAK Ptot 62.5 W TC=25°C Operating and storage temperature Tj‚Tstg -40 150 °C Continuous diode forward current IS 6.035057A TC=25°C Diode pulse current IS‚pulse 17 A TC=25°C Reverse diode dv/dt3) dv/dt 50 V/ns VDS=0...400V,ISD≤ID, Tj=25°C (see table 8)Maximum diode commutation speed dif/dt 900 A/µs 1) Limited by Tj max. 2) Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet 3Thermalcharacteristics Table3ThermalcharacteristicsDPAK Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC 2 K/W Thermal resistance, junction - ambient1) RthJA 62 K/W SMD version, device on PCB, minimal footprint
35 SMD version, device on PCB, 6cm²
Soldering temperature, wave- & reflowsoldering allowed Tsold 260 °C reflow MSL 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling.
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage1) V(BR)DSS 650 V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 3.5 4 4.5 V VDS=VGS,ID=0.21455mA Zero gate voltage drain current IDSS 1 µA VDS=650V,VGS=0V,Tj=25°C
100 VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.594 0.66 Ω VGS=10V,ID=3.21825A,Tj=25°C 1.5444 VGS=10V,ID=3.21825A, Tj=150°C Gate resistance RG 6.5 Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 543 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss 32 pF Effective output capacitance, energy related2) Co(er) 24 pF VGS=0V,VDS=0...400V Effective output capacitance, time related3) Co(tr) 97 pF ID=constant,VGS=0V, VDS=0...400V Turn-on delay time td(on) 9 ns VDD=400V,VGS=13V, ID=3.21825A,RG=6.8Ω (see table 9)Rise time tr 8 ns Turn-off delay time td(off) 40 ns Fall time tf 10 ns Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 3.5 nC VDD=480V,ID=3.2A, VGS=0to10VGate to drain charge Qgd 11 nC Gate charge total Qg 20 nC Gate plateau voltage Vplateau 6.4 V 1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office. 2) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V 3) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD 0.9 V VGS=0V,IF=3.21825A,Tj=25°C Reverse recovery time trr 65 ns VR=400V,IF=3.2A, diF/dt=100A/µs (see table 8)Reverse recovery charge Qrr 0.2 µC Peak reverse recovery current Irrm 4.5 A
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet 5Electricalcharacteristicsdiagrams Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.0 1.5 2.0 2.5 3.0 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet Powerdissipation TC[°C] Ptot[W] 100 150 Ptot=f(TC) Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Typ.drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -40 120 160 0.00 0.05 0.10 0.15 0.20 0.25 RDS(on)=f(Tj);ID=18.1A;VGS=10V
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Typ.forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 2.5 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=19.2Apulsed;parameter:VDD Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 200 300 400 500 600 700 800 900 1000 1100 1200 EAS=f(Tj);ID=6.6A;VDD=50V
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -40 120 160 540 560 580 600 620 640 660 680 700 720 740 760 VBR(DSS)=f(Tj);ID=0.25mA Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 600 100 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 Eoss=f(VDS)
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches
650VCoolMOS™CFDAPowerTransistor IPD65R660CFDA Rev.2.1,2014-11-19Final Data Sheet RevisionHistory IPD65R660CFDA Revision:2014-11-19,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-07-12 Preliminary 2.1 2014-11-19 Correction of Marking Code DisclaimerATV WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Edition2011-09-30 Publishedby InfineonTechnologiesAG 81726München,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/orany informationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilities ofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirementscomponentsmaycontaindangeroussubstances.Forinformationonthetypesinquestionplease contactyournearestInfineonTechnologiesOffice. InfineonTechnologiesComponentsmayonlybeusedinlife-supportdevicesorsystemswiththeexpresswrittenapprovalof InfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support deviceorsystem,ortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintended tobeimplantedinthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife. Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.