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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 650VCoolMOS™CEPowerTransistor IPx65R650CE DataSheet Rev.2.0 Final PowerManagement&Multimarket

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet tab DPAK TO-220FP Drain Pin 2, Tab Gate Pin 1 Source Pin 3 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • QualifiedforconsumergradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

Applications

PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandLighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 650 mΩ Qg.typ 23 nC ID,pulse 18 A Eoss@400V 2 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks IPD65R650CE PG-TO 252 IPA65R650CE PG-TO 220 FullPAK 65CE650 see Appendix A

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet TableofContents

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 7.0

4.4 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 18 A TC=25°C Avalanche energy, single pulse EAS - - 142 mJ ID=1.3A; VDD=50V; see table 11 Avalanche energy, repetitive EAR - - 0.21 mJ ID=1.3A; VDD=50V; see table 11 Avalanche current, repetitive IAR - - 1.3 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation (Non FullPAK) TO-252 Ptot - - 63 W TC=25°C Power dissipation (FullPAK) TO-220FP Ptot - - 28 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque (FullPAK) TO-220FP - - - 50 Ncm M2.5 screws Continuous diode forward current IS - - 6.1 A TC=25°C Diode pulse current2) IS,pulse - - 18 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 9 Insulation withstand voltage for TO-220FP VISO - - 2500 V Vrms,TC=25°C,t=1min 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet 3Thermalcharacteristics Table3Thermalcharacteristics(FullPAK)TO-220FP Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.5 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s Table4ThermalcharacteristicsTO-252 Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed Tsold - - 260 °C reflow MSL1

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table5Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 650 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.21mA Zero gate voltage drain current IDSS - µA VDS=650,VGS=0V,Tj=25°C VDS=650,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.54 1.40 0.65 - Ω VGS=10V,ID=2.1A,Tj=25°C VGS=10V,ID=2.1A,Tj=150°C Gate resistance RG - 10.5 - Ω f=1MHz,opendrain Table6Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 440 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 30 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 21 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω ;seetable10 Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω ;seetable10 Turn-off delay time td(off) - 64 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω ;seetable10 Fall time tf - 11 - ns VDD=400V,VGS=13V,ID=3.2A, RG=6.8Ω ;seetable10 Table7Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.75 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate to drain charge Qgd - 12 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate charge total Qg - 23 - nC VDD=480V,ID=3.2A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=480V,ID=3.2A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS 2)Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet Table8Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3.2A,Tj=25°C Reverse recovery time trr - 270 - ns VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9 Reverse recovery charge Qrr - 2 - µC VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9 Peak reverse recovery current Irrm - 13 - A VR=400V,IF=3.2A,diF/dt=100A/µs; see table 9

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Powerdissipation(FullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram3:Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T Diagram4:Max.transientthermalimpedance(FullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet Diagram5:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram6:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram7:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram8:Safeoperatingarea(FullPAK) VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet Diagram9:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram10:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram11:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 10 V 5 V 5.5 V 6 V 6.5 V 7 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram12:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 98% typ RDS(on)=f(Tj);ID=2.1A;VGS=10V

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet Diagram13:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=3.2Apulsed;parameter:VDD Diagram15:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram16:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 125 150 EAS=f(Tj);ID=1.3A;VDD=50V

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet Diagram17:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 580 600 620 640 660 680 700 720 740 VBR(DSS)=f(Tj);ID=1.0mA Diagram18:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram19:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 Eoss=f(VDS)

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet 6TestCircuits Table9Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table10Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table11Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet 7PackageOutlines Figure1OutlinePG-TO252,dimensionsinmm/inches

650VCoolMOS™CEPowerTransistor IPD65R650CE,IPA65R650CE Rev.2.0,2015-04-16Final Data Sheet ),/ )1(7/*06 01" Z8B00003319 2.5 4*8,5,10 05-05-2014 ,557* )'6* 1.130 0.177 MIN 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.862.42 2.54 (BSC) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 MIN 4.50 2.34 MAX 4.90 2.85 0.113 0.100 (BSC) 0.200 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 ,0(+*5 0.193 MAX 0.112 5('.* 5mm 9& 0.026 0.65 1.51 0.059 9% 0.026 0.65 1.38 0.054 Dimensions do not include mold flash, protrusions or gate burrs Figure 2 Outline PG-TO 220 FullPAK, dimensions in mm/inches

650V CoolMOS™ CE Power Transistor IPD65R650CE, IPA65R650CE Rev. 2.0, 2015-04-16Final Data Sheet

8 Appendix A

  • IFX CoolMOS TM CE Webpage: www.infineon.com
  • IFX CoolMOS TM CE application note: www.infineon.com
  • IFX CoolMOS TM CE simulation model: www.infineon.com
  • IFX Design tools: www.infineon.com

650V CoolMOS™ CE Power Transistor IPD65R650CE, IPA65R650CE Rev. 2.0, 2015-04-16Final Data Sheet

Revision History

IPD65R650CE, IPA65R650CE Revision: 2015-04-16, Rev. 2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-04-16 Release of final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG

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© 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.