IPD60R600PFD7S INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
  • LowswitchinglossesEoss,excellentthermalbehavior
  • Fastbodydiode
  • WiderangeportfolioofRDS(on)andpackagevariations
  • Integratedzenerdiode Benefits
  • Enableshighpowerdensitydesignsandsmallformfactors
  • Enablesefficiencygainsathigherswitchingfrequencies
  • Excellentcommutationruggedness
  • Easytoselectrightpartsandoptimizethedesign
  • HighESDruggedness Potentialapplications RecommendedforZVStopologiesusedinhighdensitychargers, adapters,lightingandmotordrivesapplications,etc. Productvalidation QualifiedaccordingtoJEDECStandard Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 600 mΩ Qg,typ 8.5 nC ID,pulse 14 A Eoss @ 400V 1.1 µJ Body diode diF/dt 1300 A/µs ESD Class (HBM) 2 - Type/OrderingCode Package Marking RelatedLinks IPD60R600PFD7S PG-TO 252-3 60S600D7 see Appendix A

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet TableofContents

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

4 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 14 A TC=25°C Avalanche energy, single pulse EAS - - 17 mJ ID=1.4A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.08 mJ ID=1.4A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 1.4 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 31 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - - Ncm - Continuous diode forward current1) IS - - 6 A TC=25°C Diode pulse current2) IS,pulse - - 14 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=4.7A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=4.7A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.0 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wave & reflow soldering allowed Tsold - - 260 °C reflow MSL3

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.08mA Zero gate voltage drain current1) IDSS 37 µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.517 1.219 0.600 - Ω VGS=10V,ID=1.7A,Tj=25°C VGS=10V,ID=1.7A,Tj=150°C Gate resistance RG - 11.0 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 344 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 8 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related2) Co(er) - 13 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related3) Co(tr) - 120 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 9.2 - ns VDD=400V,VGS=10V,ID=1.7A, RG=10.2Ω ;seetable9 Rise time tr - 10 - ns VDD=400V,VGS=10V,ID=1.7A, RG=10.2Ω ;seetable9 Turn-off delay time td(off) - 43.5 - ns VDD=400V,VGS=10V,ID=1.7A, RG=10.2Ω ;seetable9 Fall time tf - 23 - ns VDD=400V,VGS=10V,ID=1.7A, RG=10.2Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.0 - nC VDD=400V,ID=1.7A,VGS=0to10V Gate to drain charge Qgd - 3.0 - nC VDD=400V,ID=1.7A,VGS=0to10V Gate charge total Qg - 8.5 - nC VDD=400V,ID=1.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.6 - V VDD=400V,ID=1.7A,VGS=0to10V 1) Maximum specification is defined by calculated six sigma upper confidence bound 2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1.0 - V VGS=0V,IF=1.7A,Tj=25°C Reverse recovery time trr - 47 71 ns VR=400V,IF=1.7A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.10 0.20 µC VR=400V,IF=1.7A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 3.8 - A VR=400V,IF=1.7A,diF/dt=100A/µs; see table 8

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms DC 10 ms ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[C/W] 10-5 10-4 10-3 10-2 10-1 10-1 100 101 0.5 0.05 0.01 single pulse 0.02 0.2 0.1 ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 10 V 20 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 0.900 1.000 1.100 1.200 1.300 1.400 1.500 1.600 1.700 1.800 7 V 6.5 V 20 V 10 V 6 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 RDS(on)=f(Tj);ID=1.7A;VGS=10V

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 400 V VGS=f(Qgate);ID=1.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=1.4A;VDD=50V

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 540 570 600 630 660 690 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.3 0.6 0.9 1.2 1.5 Eoss=f(VDS)

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet 6PackageOutlines 2.5 REVISION 07-08-2019 ISSUE DATE EUROPEAN PROJECTION SCALE 5mm 2.5 DOCUMENT NO. Z8B00180313MILLIMETERS 4.57 (BSC) 2.29 (BSC) D N H e E 1.38 0.60 0.90 5.25 9.40 6.40 4.70 5.98 A DIM c b 5.13 MIN 2.20 0.68 0.46 0.72 0.46 0.00 0.054 0.024 0.035 0.207 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.40 6.22 6.73 1.25 10.48 0.180 (BSC) 0.090 (BSC) 0.067 0.220 0.039 0.213 0.265 0.049 0.245 0.413 0.202 0.087 0.027 0.018 0.028 0.018 0.000 5.50 MAX 2.40 0.15 1.10 0.60 0.89 0.60 INCHES MIN 0.217 MAX 0.006 0.094 0.035 0.024 0.043 0.024 L Figure1OutlinePG-TO252-3,dimensionsinmm/inches

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSPFD7Webpage:www.infineon.com
  • IFXCoolMOSPFD7applicationnote:www.infineon.com
  • IFXCoolMOSPFD7simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªPFD7SJPowerDevice IPD60R600PFD7S Rev.2.0,2019-10-15Final Data Sheet RevisionHistory IPD60R600PFD7S Revision:2019-10-15,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-10-15 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2019InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.