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Technical content

Features

  • Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness
  • Significantreductionofswitchingandconductionlosses
  • ExcellentESDrobustness>2kV(HBM)forallproducts
  • BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²) Benefits
  • Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages
  • Simplifiedthermalmanagementduetolowswitchingandconduction losses
  • Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection
  • Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 600 mΩ Qg,typ 9 nC ID,pulse 16 A Eoss @ 400V 1.1 µJ Body diode diF/dt 900 A/µs Type/OrderingCode Package Marking RelatedLinks IPD60R600P7 PG-TO 252-3 60R600P7 see Appendix A

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet TableofContents

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

4 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 16 A TC=25°C Avalanche energy, single pulse EAS - - 17 mJ ID=1.6A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.08 mJ ID=1.6A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 1.6 A - MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 30 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -55 - 150 °C - Mounting torque - - - - Ncm - Continuous diode forward current IS - - 6 A TC=25°C Diode pulse current2) IS,pulse - - 16 A TC=25°C Reverse diode dv/dt3) dv/dt - - 50 V/ns VDS=0...400V,ISD<=6A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 900 A/µs VDS=0...400V,ISD<=6A,Tj=25°C see table 8 Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.19 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 35 45 °C/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area for drain connection and cooling. PCB is vertical without air stream cooling. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C reflow MSL1

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.08mA Zero gate voltage drain current IDSS - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.490 1.152 0.600 - Ω VGS=10V,ID=1.7A,Tj=25°C VGS=10V,ID=1.7A,Tj=150°C Gate resistance RG - 6.3 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 363 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 7 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related1) Co(er) - 14 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 149 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 7 - ns VDD=400V,VGS=13V,ID=1.7A, RG=10.0Ω ;seetable9 Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=1.7A, RG=10.0Ω ;seetable9 Turn-off delay time td(off) - 37 - ns VDD=400V,VGS=13V,ID=1.7A, RG=10.0Ω ;seetable9 Fall time tf - 19 - ns VDD=400V,VGS=13V,ID=1.7A, RG=10.0Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2 - nC VDD=400V,ID=1.7A,VGS=0to10V Gate to drain charge Qgd - 3 - nC VDD=400V,ID=1.7A,VGS=0to10V Gate charge total Qg - 9 - nC VDD=400V,ID=1.7A,VGS=0to10V Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=1.7A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.7A,Tj=25°C Reverse recovery time trr - 160 - ns VR=400V,IF=1A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.71 - µC VR=400V,IF=1A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 9.9 - A VR=400V,IF=1A,diF/dt=100A/µs; see table 8

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 10 µs 1 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-4 10-3 10-2 10-1 100 101 102 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-1 100 101 0.5 0.02 single pulse 0.01 0.2 0.1 0.05 ZthJC=f(tP);parameter:D=tp/T

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.000 1.200 1.400 1.600 1.800 2.000 2.200 7 V 20 V 6 V 10 V 6.5 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.000 0.500 1.000 1.500 2.000 2.500 3.000 RDS(on)=f(Tj);ID=1.7A;VGS=10V

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 400 V VGS=f(Qgate);ID=1.7Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=1.6A;VDD=50V

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 540 550 560 570 580 590 600 610 620 630 640 650 660 670 680 690 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 Eoss=f(VDS)

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet 6PackageOutlines 2.5 REVISION0605-02-2016ISSUE DATE EUROPEAN PROJECTION0SCALE 5mm 02.5 DOCUMENT NO.Z8B00003328MILLIMETERS 4.57 (BSC)2.29 (BSC) D NHE1e1eED1 L31.180.510.89 5.02 9.40 6.354.325.97 b3ADIMb2cbc2 A14,95 0.00 0.0460.0200.035 0.1980.2500.1850.235 0.3701.781.02 5.215.846.226.73 0.205 0.040 0.2300.265 0.050 0.245 0.413 0.0005.50 INCHESMIN 0.217 L Figure1OutlinePG-TO252-3,dimensionsinmm/inches

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSP7Webpage:www.infineon.com
  • IFXCoolMOSP7applicationnote:www.infineon.com
  • IFXCoolMOSP7simulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

600VCoolMOSªP7PowerTransistor IPD60R600P7 Rev.2.5,2018-03-02Final Data Sheet RevisionHistory IPD60R600P7 Revision:2018-03-02,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-02-03 Release of final version 2.1 2017-02-17 Modified Safe Operating Area diagrams on page 7 2.2 2017-03-02 updated y-axis label diagram 8 2.3 2017-07-25 Updated Co(er); Co(tr); Eoss 2.4 2017-10-13 Updated diagram scalings; Nomenclature of product qualification grade was changed 2.5 2018-03-02 Nomenclature of product qualification grade was changed, new revision of package outlines TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.