IPB65R099CFD7A INFINEON | Alldatasheet

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Technical content

Features

  • Latest650Vautomotivequalifiedtechnologywithintegratedfastbody diodeonthemarketfeaturingultralowQrr
  • LowestFOMRDS(on)*QgandRDS(on)*Eoss
  • 100%avalanchetested
  • Best-in-classRDS(on)inSMDandTHDpackages Benefits
  • Optimizedforhigherbatteryvoltagesupto475Vthankstofurther improvedrobustness
  • Lowerswitchinglossesenablinghigherswitchingfrequencies
  • Highqualityandreliability
  • Increasedefficiencyinlightloadandfullloadconditions Potentialapplications SuitableforPFCandDC-DCstagesfor:
  • UnidirectionalandbidirectionalDC-DCconverters,
  • On-BoardbatteryChargers Productvalidation QualifiedaccordingtoAECQ101 Pleasenote:Forproductionpartapprovalprocess(PPAP)releasewe proposetoshareapplicationrelatedinformationduringanearlydesign phasetoavoiddelaysinPPAPrelease.PleasecontactInfineonsales office. Table1KeyPerformanceParameters Parameter Value Unit VDS 650 V RDS(on),max 99 mΩ Qg,typ 53 nC ID,pulse 107 A Eoss @ 400V 6.8 µJ Body diode diF/dt 1300 A/µs Type/OrderingCode Package Marking RelatedLinks IPB65R099CFD7A PG-TO263-3 65A099F7 see Appendix A

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet TableofContents

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID

15 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 107 A TC=25°C Avalanche energy, single pulse EAS - - 125 mJ ID=5.0A; VDD=50V; see table 10 Avalanche current, single pulse IAS - - 5.0 A - MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS,pulse -30 - 30 V frepetition<=100kHz, tpulse <= 2ns Power dissipation Ptot - - 127 W TC=25°C Storage temperature Tstg -55 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Mounting torque - - - - Ncm - Continuous diode forward current IS - - 24 A TC=25°C Diode pulse current2) IS,pulse - - 107 A TC=25°C Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=12.5A,Tj=25°C see table 8 Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=12.5A,Tj=25°C see table 8 1) Limited by Tj max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.98 °C/W - Soldering temperature, reflow soldering allowed Tsold - - 260 °C reflow MSL1

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage1) V(BR)DSS 650 - - V VGS=0V,ID=1mA Gate threshold voltage2) V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.63mA Zero gate voltage drain current IDSS - µA VDS=650V,VGS=0V,Tj=25°C VDS=650V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 0.1 µA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 0.082 0.183 0.099 - Ω VGS=10V,ID=12.5A,Tj=25°C VGS=10V,ID=12.5A,Tj=150°C Gate resistance RG - 5.9 - Ω f=250kHz,opendrain Table5Dynamiccharacteristics External parasitic elements (PCB layout) influence switching behavior significantly. Stray inductances and coupling capacitances must be minimized. For layout recommendations please use provided application notes or contact Infineon sales office. Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 2513 - pF VGS=0V,VDS=400V,f=250kHz Output capacitance Coss - 36 - pF VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related3) Co(er) - 85 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related4) Co(tr) - 893 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 25 - ns VDD=400V,VGS=13V,ID=12.5A, RG=5.3Ω ;seetable9 Rise time tr - 11 - ns VDD=400V,VGS=13V,ID=12.5A, RG=5.3Ω ;seetable9 Turn-off delay time td(off) - 92 - ns VDD=400V,VGS=13V,ID=12.5A, RG=5.3Ω ;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=12.5A, RG=5.3Ω ;seetable9 1) For applications with applied blocking voltage > 475 V, we recommend to evaluate the impact of the cosmic radiation effect in early design phase. For assessment, please contact local Infineon sales office. 2) We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of potential “linear mode”, please contact Infineon sales office. 3)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 4)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 15 - nC VDD=400V,ID=12.5A,VGS=0to10V Gate to drain charge Qgd - 16 - nC VDD=400V,ID=12.5A,VGS=0to10V Gate charge total Qg - 53 - nC VDD=400V,ID=12.5A,VGS=0to10V Gate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=12.5A,VGS=0to10V Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 1.1 - V VGS=0V,IF=12.5A,Tj=25°C Reverse recovery time trr - 147 - ns VR=400V,IF=12.5A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.78 - µC VR=400V,IF=12.5A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 9.8 - A VR=400V,IF=12.5A,diF/dt=100A/µs; see table 8

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 103 10 µs 1 µs 100 µs 1 ms ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[°C/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.1 0.2 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 125 150 175 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 100 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 100 0.150 0.180 0.210 0.240 0.270 0.300 10 V 20 V 7 V 6.5 V 6 V 5.5 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[normalized] -50 -25 100 125 150 0.5 1.0 1.5 2.0 2.5 RDS(on)=f(Tj);ID=12.5A;VGS=10V

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 100 120 140 160 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 400 V VGS=f(Qgate);ID=12.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.3 0.6 0.9 1.2 1.5 10-1 100 101 102 125 °C 25 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 100 125 EAS=f(Tj);ID=5.0A;VDD=50V

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -50 -25 100 125 150 600 630 660 690 720 750 VBR(DSS)=f(Tj);ID=1mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 105 Ciss Coss Crss C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 Eoss=f(VDS)

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform VDS IF R g1 R g 2 R g1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet 6PackageOutlines Figure1OutlinePG-TO263-3,dimensionsinmm/inches

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSCFD7AWebpage:www.infineon.com
  • IFXCoolMOSCFD7Aapplicationnote:www.infineon.com
  • IFXCoolMOSCFD7Asimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

650VCoolMOSªCFD7ASJPowerDevice IPB65R099CFD7A Rev.2.0,2020-03-25Final Data Sheet RevisionHistory IPB65R099CFD7A Revision:2020-03-25,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 0.9 2017-10-13 Release of target version 0.91 2017-11-29 Update of Vds on page 1, switching times and test conditions 0.92 2018-12-10 Target 2.0 2020-03-25 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Disclaimer WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirementscomponentsmaycontaindangeroussubstances.Forinformationonthetypesinquestionplease contactyournearestInfineonTechnologiesOffice. InfineonTechnologiesComponentsmayonlybeusedinlife-supportdevicesorsystemswiththeexpresswrittenapprovalof InfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support deviceorsystem,ortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintended tobeimplantedinthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife. Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.