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Industrial & Multimarket Data Sheet Rev. 2.0, 2009-08-27 Final CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPx60R600C6 MOSFET Metal Oxide Semiconductor Field Effect Transistor
600V CoolMOS™ C6 Power Transist or IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 FinalData Sheet 2 Rev. 2.0, 2009-08-27
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and cond uction losses make switching applications even more efficient, more compact, lighter, and cooler.
Features
- Extremely low losses due to very low FOM R dson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- JEDEC 1) qualified, Pb-free plating
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.6 Qg,typ 20.5 nC ID,pulse 19 A Eoss @ 400V 1.9 µJ Body diode di/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPB60R600C6 PG-TO263 IFX C6 Product Brief IPD60R600C6 PG-TO252 IFX C6 Portfolio IPP60R600C6 PG-TO220 6R600C6 IFX CoolMOS Webpage IPA60R600C6 PG-TO220 FullPAK IFX Design tools
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Table of Contents FinalData Sheet 3 Rev. 2.0, 2009-08-27 Table of Contents
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Maximum ratings FinalData Sheet 4 Rev. 2.0, 2009-08-27
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) 1) Limited by Tj,max. Maximum duty cycle D=0.75 ID -- 7 . 3 A TC= 25 °C
4.6 TC= 100°C
Pulsed drain current2) 2) Pulse width tp limited by Tj,max ID,pulse -- 1 9 A TC=25 °C Avalanche energy, single pulse EAS -- 1 3 3 m J ID=1.3 A,VDD=50 V (see table 21) Avalanche energy, repetitive EAR -- 0 . 2 ID=1.3 A,VDD=50 V Avalanche current, repetitive IAR -- 1 . 3 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS -20 - 20 V static -30 30 AC (f>1 Hz) Power dissipation for TO-220, TO-252, TO-263 Ptot -- 6 3 W TC=25 °C Power dissipation for TO-220 FullPAK Ptot -- 2 8 W TC=25 °C Operating and storage temperature Tj,Tstg -55 - 150 °C Mounting torque TO-220 - - 60 Ncm M3 and M3.5 screws Mounting torque TO-220 FullPAK 50 M2.5 screws Continuous diode forward current IS -- 6 . 3 A TC=25 °C Diode pulse current2) IS,pulse -- 1 9 A TC=25 °C Reverse diode dv/dt3) 3) Identical low side and high side switch with identical RG dv/dt - - 15 V/ns VDS=0...400 V,ISD ID, Tj=25 °C Maximum diode commutation speed3) dif/dt 500 A/µs (see table 22)
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Thermal characteristics FinalData Sheet 5 Rev. 2.0, 2009-08-27
3 Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R600C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 2 . 0 ° C / W Thermal resistance, junction - ambient RthJA - - 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220FullPAK (IPA60R600C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 4 . 5 ° C / W Thermal resistance, junction - ambient RthJA - - 80 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 5 Thermal characteristics TO-263 (IPB60R600C6),TO-252 (IPD60R600C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC -- 2 . 0 ° C / W Thermal resistance, junction - ambient RthJA - - 62 SMD version, device on PCB, minimal footprint
35 SMD version, device
on PCB, 6cm2 cooling area1) 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL1
600V CoolMOS™ C6 Power Transistor IPx60R600C6
Electrical characteristics
FinalData Sheet 6 Rev. 2.0, 2009-08-27
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 6 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0 V, ID=0.25 mA Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=0.20mA Zero gate voltage drain current IDSS -- 1µ A VDS=600 V, VGS=0 V, Tj=25 °C -1 0 - VDS=600 V, VGS=0 V, Tj=150 °C Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) -0 . 5 4 0 . 6 0 VGS=10 V, ID=2.4 A, Tj=25 °C Tj=150 °C Gate resistance RG -1 7 . 5 - f=1 MHz, open drain Table 7 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss -4 4 0 - p F VGS=0 V, VDS=100 V, f=1 MHzOutput capacitance Coss -3 0 - Effective output capacitance, energy related1) 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(er) -2 1 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) -8 8 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) -1 2 - n s VDD=400 V, VGS=13 V, ID=3 A, RG=6 . 8 (see table 20) Rise time tr -9- Turn-off delay time td(off) -8 0 - Fall time tf -1 3 -
600V CoolMOS™ C6 Power Transistor IPx60R600C6 FinalData Sheet 7 Rev. 2.0, 2009-08-27 Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs -2 . 5 - n C VDD=480 V, ID=3.0A, VGS=0 to 10 VGate to drain charge Qgd -1 0 . 5 - Gate charge total Qg -2 0 . 5 - Gate plateau voltage Vplateau -5 . 4 - V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode forward voltage VSD -0 . 9 - V VGS=0 V, IF=3.0A, Tj=25 °C Reverse recovery time trr -2 5 0 - n s VR=400 V, IF=3.0A, diF/dt=100 A/µs (see table 22) Reverse recovery charge Qrr -2 . 1 - µ C Peak reverse recovery current Irrm -1 6 - A
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Electrical characteristics diagrams FinalData Sheet 8 Rev. 2.0, 2009-08-27
5 Electrical characteristics diagrams
TO-220, TO-252, TO-263 Power dissipation TO-220 FullPAK Ptot = f(TC) Ptot = f(TC) Table 11 Max. transient thermal impedance TO-220, TO-252, TO-263 Max. transient thermal impedance TO-220 FullPAK Z(thJC)=f(tp); parameter: D=tp/T Z(thJC)=f(tp); parameter: D=tp/T
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Electrical characteristics diagrams FinalData Sheet 9 Rev. 2.0, 2009-08-27 Table 12 Safe operating area TC=25 °C TO-220, TO-252, TO-263 Safe operating area TC=25 °C TO-220 FullPAK ID=f(VDS); TC=25 °C; D=0; parameter tp ID=f(VDS); TC=25 °C; D=0; parameter tp Table 13 Safe operating area TC=80 °C TO-220, TO-252, TO-263 Safe operating area TC=80 °C TO-220 FullPAK ID=f(VDS); TC=80 °C; D=0; parameter tp ID=f(VDS); TC=80 °C; D=0; parameter tp
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Electrical characteristics diagrams FinalData Sheet 10 Rev. 2.0, 2009-08-27 Table 14 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 15 Typ. drain-source on-state resistance Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=2.4 A; VGS=10 V
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Electrical characteristics diagrams FinalData Sheet 11 Rev. 2.0, 2009-08-27 Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=3.0A pulsed Table 17 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=1.3 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Electrical characteristics diagrams FinalData Sheet 12 Rev. 2.0, 2009-08-27 Table 18 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 19 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Test circuits FinalData Sheet 13 Rev. 2.0, 2009-08-27
6 Test circuits
Table 20 Switching times test circui t and waveform for inductive load Switching times test circuit for inductive load Switching time waveform Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform Table 22 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform VDS VGS VDS VGS td(on ) td( o f f)tr ton tf toff 10% 90% VDSID VDS VD V(BR)DS ID VDS VDS ID RG1 RG2 RG1 = RG2 Ι F dit /d trr 10% 90% Ι RRM RRMΙ t RRMΙ v SIL00088 QF v i F QS RRMV Stt F /did rr t rrtt S tF=+ =rrQQ SF+ Q
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Package outlines FinalData Sheet 14 Rev. 2.0, 2009-08-27
7 Package outlines
Figure 1 Outlines TO-220, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Package outlines FinalData Sheet 15 Rev. 2.0, 2009-08-27 Figure 2 Outlines TO-220 FullPAK, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Package outlines FinalData Sheet 16 Rev. 2.0, 2009-08-27 Figure 3 Outlines TO-252, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor IPx60R600C6 Package outlines FinalData Sheet 17 Rev. 2.0, 2009-08-27 Figure 4 Outlines TO-263, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor IPx60R600C6
Revision History
FinalData Sheet 18 Rev. 2.0, 2009-08-27
8 Revision History
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2009-08-27 Published by Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. With respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-suppo rt devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. CoolMOS C6 600V CoolMOS™ C6 Power Transistor Revision History: 2009-08-27, Rev. 2.0 Previous Revision: Revision Subjects (major ch anges since last revision)