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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R950C6 DataSheet Rev.2.2 Final PowerManagement&Multimarket
600V CoolMOS™ C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 FinalData Sheet 2 Rev. 2.2, 2014-12-10
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFET s, designed according to the superjunction (SJ) princip le and pioneered by Infineon T echnologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and co nduction losses make switching applications even more efficient, more co mpact, lighter, and cooler.
Features
- Extremely low losses due to very low FOM R dson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Qualified for industrial grade applications according to JE DEC1)
- Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Serve r, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on th e gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.95 " Qg,typ 13 nC ID,pulse 12 A Eoss @ 400V 1.3 µJ Body diode di/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPD60R950C6 PG-TO252 !IFX C6 Product Brief IPB60R950C6 PG-TO263 !IFX C6 Portfolio IPP60R950C6 PG-TO220 6R950C6 !IFX CoolMOS Webpage IPA60R950C6 PG-TO220 FullPAK !IFX Design tools
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Table of Contents FinalData Sheet 3 Rev. 2.2, 2014-12-10 Table of Contents
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Maximum Ratings FinalData Sheet 4 Rev. 2.2, 2014-12-10
2 Maximum Ratings
at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current1) 1) Limited by Tj,max. Maximum duty cycle D=0.75 ID - - 4.4 A TC= 25 °C
2.8 TC= 100°C
Pulsed drain current2) 2) Pulse width tp limited by Tj,max ID,pulse - - 12 A TC=25 °C Avalanche energy, single pulse EAS - - 46 mJ ID=0.8 A,VDD=50 V (see table 21) Avalanche energy, repetitive EAR - - 0.13 ID=0.8 A,VDD=50 V Avalanche current, repetitive IAR - - 0.8 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS -20 - 20 V static -30 30 AC (f>1 Hz) Power dissipation for TO-220, TO-252, TO-263 Ptot - - 37 W TC=25 °C Power dissipation for TO-220 FullPAK Ptot - - 26 W TC=25 °C Operating and storage temperature Tj,Tstg -55 - 150 °C Mounting torque TO-220 - - 60 Ncm M3 and M3.5 screws TO-220FP 50 M2.5 screws Continuous diode forward current IS - - 3.9 A TC=25 °C Diode pulse current2) IS,pulse - - 12 A TC=25 °C Reverse diode dv/dt3) 3) Identical low side and high side switch with identical RG dv/dt - - 15 V/ns VDS=0...480 V, ISD # ID, Tj=125 °C Maximum diode commutation speed3) dif/dt 500 A/µs (see table 22)
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Thermal characteristics FinalData Sheet 5 Rev. 2.2, 2014-12-10
3 Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R950C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 3.41 °C/W Thermal resistance, junction - ambient RthJA - - 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220FullPAK (IPA60R950C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 4.9 °C/W Thermal resistance, junction - ambient RthJA - - 80 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 5 Thermal characteristics TO-263 (IPB60R950C6),TO-252 (IPD6 0R950C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 3.41 °C/W Thermal resistance, junction - ambient RthJA - - 62 SMD version, device on PCB, minimal footprint
35 SMD version, device
on PCB, 6cm2 cooling area1) 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without air stream cooling Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL1
600V CoolMOS™ C6 Power Transistor IPx60R950C6
Electrical characteristics
FinalData Sheet 6 Rev. 2.2, 2014-12-10
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified Table 6 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0 V, ID=0.25 mA Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=0.13 mA Zero gate voltage drain current IDSS - - 1 µA VDS=600 V, VGS=0 V, Tj=25 °C - 10 - VDS=600 V, VGS=0 V, Tj=150 °C Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) - 0.86 0.95 " VGS=10 V, ID=1.5 A, Tj=25 °C - 2.22 - VGS=10 V, ID=1.5 A, Tj=150 °C Gate resistance RG - 16 - " f=1 MHz, open drain Table 7 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss - 280 - pF VGS=0 V, VDS=100 V, f=1 MHzOutput capacitance Coss - 21 - Effective output capacitance, energy related1) 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(er) - 14 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) - 57 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400 V, VGS=10 V, ID=1.9A, RG= 12.2 " (see table 20) Rise time tr - 8 - Turn-off delay time td(off) - 60 - Fall time tf - 13 -
600V CoolMOS™ C6 Power Transistor IPx60R950C6 FinalData Sheet 7 Rev. 2.2, 2014-12-10 Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. IGate to source charge Qgs - 1.5 - nC VDD=480 V, ID=1.9 A, VGS=0 to 10 VGate to drain charge Qgd - 6.5 - Gate charge total Qg - 13 - Gate plateau voltage Vplateau - 5.4 - V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=1.9 A, Tj=25 °C Reverse recovery time trr - 220 - ns VR=400 V, IF=1.9 A, diF/dt=100 A/µs (see table 22) Reverse recovery charge Qrr - 1.5 - µC Peak reverse recovery current Irrm - 12 - A
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Electrical characteristics diagrams FinalData Sheet 8 Rev. 2.2, 2014-12-10
5 Electrical characteristics diagrams
TO-220, TO-252, TO-263 Power dissipation TO-220 FullPAK Ptot = f(TC) Ptot = f(TC) Table 11 Max. transient thermal impedance TO-220, TO-252, TO-263 Max. transient thermal impedance TO-220 FullPAK Z(thJC)=f(tp); parameter: D=tp/T Z(thJC)=f(tp); parameter: D=tp/T
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Electrical characteristics diagrams FinalData Sheet 9 Rev. 2.2, 2014-12-10 Table 12 Safe operating area TC=25 °C TO-220, TO-252, TO-263 Safe operating area TC=25 °C TO-220 FullPAK ID=f(VDS); TC=25 °C; D=0; parameter tp ID=f(VDS); TC=25 °C; D=0; parameter tp Table 13 Safe operating area TC=80 °C TO-220, TO-252, TO-263 Safe operating area TC=80 °C TO-220 FullPAK ID=f(VDS); TC=80 °C; D=0; parameter tp ID=f(VDS); TC=80 °C; D=0; parameter tp
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Electrical characteristics diagrams FinalData Sheet 10 Rev. 2.2, 2014-12-10 Table 14 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 15 Typ. drain-source on-state resistance Drain-source on-stat e resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=1.5A; VGS=10 V
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Electrical characteristics diagrams FinalData Sheet 11 Rev. 2.2, 2014-12-10 Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=1.9A pulsed Table 17 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=0.8A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Electrical characteristics diagrams FinalData Sheet 12 Rev. 2.2, 2014-12-10 Table 18 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 19 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Test circuits FinalData Sheet 13 Rev. 2.2, 2014-12-10
6 Test circuits
Table 20 Switching times test circuit and waveform for inductive loa d Switching times test circuit for inductive load Switching time wave form Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive wavefor m Table 22 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform VD S VGS VD S VGS td( on ) td ( off )tr ton tf toff 10% 90% VDSID VDS VD V(BR)DS ID VDS VD S ID RG1 RG2 RG1 = RG2 @$ %)@ %LL +*" 0*" 998 998 % 998 ;57***// 998# ;% % 4 )@$@ LL % LL% % ; %41 % 1LL" " ; 4% "
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Package outlines FinalData Sheet 14 Rev. 2.2, 2014-12-10
7 Package outlines
Figure 1 Outlines TO-252, dimensions in mm/inches
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Package outlines FinalData Sheet 15 Rev. 2.2, 2014-12-10 Figure 2 Outlines TO-220, dimensions in mm/inches
6**M =^^[FGKm C6 H^fTa LaP]bXbc^a IP(%!'95!C% ),/ )1(7/*06 01" Z8B00003319 2.5 4*8,5,10 05-05-2014 ,557* )'6* 1.130 0.177 MIN 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.862.42 2.54 (BSC) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 /,..,/*6*45 MIN 4.50 2.34 MAX 4.90 2.85 0.113 0.100 (BSC) 0.200 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 ,0(+*5 0.193 MAX 0.112 5('.* 5mm 9& 0.0260.65 1.51 0.059 9% 0.0260.65 1.38 0.054 ;XVc\`T ! Dcb[X]T E<%HD **( ;c[[E5@$ SX\\T]aX^]a X] \\\\'X]RWTa /45<487 @DC=;?7B Final Data Sheet Rev. 2.5, 2014-12-09Rev. 2.2, 2014-12-10
600V CoolMOS™ C6 Power Transistor IPx60R950C6 Package outlines FinalData Sheet 17 Rev. 2.2, 2014-12-10 Figure 4 Outlines TO-263, dimensions in mm/inches
600VCoolMOS™C6PowerTransistor IPx60R950C6 Rev.2.2,2015-02-11 RevisionHistory IPx60R950C6 Revision:2015-02-11,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2011-06-08 Release of final Data sheet 2.1 2011-09-14 - 2.2 2015-02-11 PG-TO220 FullPAK package outline update (creation:2014-12-10) WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.