HVV1214-025 ASI | Alldatasheet

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The device resides in the SM200 surface mount package with a ceramic lid. Symbol Parameter Value Unit VDSS Drain-Source Voltage 95 V VGS Gate-Source Voltage -10, 10 V IDSX Drain Current 2 A PD

2 Power Dissipation 116 W

TS Storage Temperature -65 to +150 TJ Junction Temperature 200 °C Symbol Parameter Max Unit JC 1 Thermal Resistance 1.5 °C/W

ELECTRICAL CHARACTERISTICS

FEATURES

DESCRIPTION

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM High Power Gain Excellent Ruggedness 50V Supply Voltage

25 Watts, 50V, 1200-1400MHz

200!s, 10% Duty >LL'('*#&(+ The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz. The HVV1214-025 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance POUT = 25W F = 1300 MHz 20:1 VSWR Symbol Parameter Conditions Min Typ Max Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=2mA 95 102 V IDSS Drain Leakage Current VGS=0V,VDS=50V 15 50 !A IGSS Gate Leakage Current VGS=5V,VDS=0V 2 10 !A GP 1 Power Gain POUT=25W, F=1300 MHz 19 20.5 dB IRL1 Input Return Loss POUT=25W, F=1300 MHz -12 -8 dB džD

1 Drain Efficiency POUT=25W, F=1300 MHz 40 42 %

PD1 Pulse Droop POUT=25W, F=1300 MHz 0.3 0.6 dB VGS(Q) Gate Quiescent Voltage VDD=50V, IDQ=15mA 1.0 1.4 1.7 V VTH Threshold Voltage VDD=5V, ID=300uA 0.7 1.2 1.7 V 1Under Pulse Conditions: Pulse Width = 200!s, Pulse Duty Cycle = 10% at VDD = 50V, IDQ = 15mA 2Rated at TCASE = 25°C

ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for consequences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights. Note: Drawing is not actual size. .205+/-.008 [5.21+/-0.20] 0.45+/-.005 [1.13+/-0.13] .034+/-.005 [0.86+/-0.13] .020+/-.005 [0.51+/-0.13] .007 [0.17] .192+/-.005 [4.88+/-0.13] DRAIN SOURCE GATE .175+/-.008 [4.45+/-0.20] .018 [0.45] INCHES [MM] .088 +/- .008